AD8132AR Analog Devices Inc, AD8132AR Datasheet - Page 9

• Manufacturer Part Number: AD8132AR
• Description: IC AMP DIFF LDIST LP 70MA 8SOIC
• Manufacturer: Analog Devices Inc

Specifications of AD8132AR

• Slew Rate: 1200 V/µs
• Mounting Type: Surface Mount
• Rohs Status: RoHS non-compliant
• Amplifier Type: Differential
• Number Of Circuits: 1
• Output Type: Differential
• -3db Bandwidth: 360MHz
• Current - Input Bias: 3µA
• Voltage - Input Offset: 1000µV
• Current - Supply: 12mA
• Current - Output / Channel: 70mA
• Voltage - Supply, Single/dual (±): 2.7 V ~ 11 V, ±1.35 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 8-SOIC (3.9mm Width)
• No. Of Amplifiers: 1
• Bandwidth: 350MHz
• Amplifier Case Style: SOIC
• No. Of Pins: 8
• Operating Temperature Range: -40°C To +85°C
• Peak Reflow Compatible (260 C): No
• Rohs Compliant: No
• Gain Bandwidth Product: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ABSOLUTE MAXIMUM RATINGS
Table 7.
Parameter
Supply Voltage
V
Internal Power Dissipation
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering 10 sec)
Junction Temperature
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
specified for the device soldered in a circuit board in still air.
Table 8.
Package Type
8-Lead SOIC, 4-Layer
8-Lead MSOP, 4-Layer
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8132 packages
is limited by the associated rise in junction temperature (T
the die. At approximately 150°C, the glass transition temperature,
the plastic changes its properties. Even temporarily exceeding
this temperature limit can change the stresses that the package
exerts on the die, permanently shifting the parametric performance
of the AD8132. Exceeding a junction temperature of 150°C for
an extended period can result in changes in the silicon devices,
potentially causing failure.
JA
OCM
is specified for the worst-case conditions, that is, θ
θ
121
142
JA
Rating
±5.5 V
±V
250 mW
−40°C to +125°C
−65°C to +150°C
300°C
150°C
S
JA
Unit
°C/W
°C/W
is
J
) on
Rev. I | Page 9 of 32
The power dissipated in the package (P
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (V
quiescent current (I
and common-mode currents flowing to the load, as well as
currents flowing through the external feedback networks and
the internal common-mode feedback loop. The internal resistor
tap used in the common-mode feedback loop places a 1 kΩ
differential load on the output. Consider rms voltages and
currents when dealing with ac signals.
Airflow reduces θ
with the package leads from metal traces through holes, ground,
and power planes reduces the θ
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the 8-lead SOIC
(θ
on a JEDEC standard 4-layer board. θ
ESD CAUTION
JA
= 121°C/W) and 8-lead MSOP (θ
Figure 3. Maximum Power Dissipation vs. Ambient Temperature
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 100 110 120
JA
S
. In addition, more metal directly in contact
). The load current consists of the differential
AMBIENT TEMPERATURE (°C)
MSOP
JA
.
JA
SOIC
JA
values are approximations.
D
= 142°C/W) packages
) is the sum of the
S
) times the
AD8132