MCP1727-1802E/SN Microchip Technology, MCP1727-1802E/SN Datasheet - Page 20

• Manufacturer Part Number: MCP1727-1802E/SN
• Description: IC REG LDO 1.5A 1.8V 8SOIC
• Manufacturer: Microchip Technology

Specifications of MCP1727-1802E/SN

• Regulator Topology: Positive Fixed
• Voltage - Output: 1.8V
• Voltage - Input: 2.3 ~ 6 V
• Voltage - Dropout (typical): 0.33V @ 1.5A
• Number Of Regulators: 1
• Current - Output: 1.5A (Min)
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Primary Input Voltage: 2.3V
• Output Voltage Fixed: 1.8V
• Dropout Voltage Vdo: 330mV
• No. Of Pins: 8
• Output Current: 1.5A
• Operating Temperature Range: -40°C To +125°C
• Number Of Outputs: 1
• Polarity: Positive
• Input Voltage Max: 6 V
• Output Voltage: 1.8 V
• Output Type: Fixed
• Dropout Voltage (max): 0.55 V at 1.5 A
• Line Regulation: 0.05 % / V
• Load Regulation: 0.5 %
• Voltage Regulation Accuracy: 2 %
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Limit (min): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

MCP1727
5.0
5.1
The MCP1727 is used for applications that require high
LDO output current and a power good output.
FIGURE 5-1:
5.1.1
5.2
5.2.1
The internal power dissipation within the MCP1727 is a
function of input voltage, output voltage, output current
and quiescent current.
calculate the internal power dissipation for the LDO.
EQUATION 5-1:
DS21999B-page 20
Off
Input Voltage Range = 3.3V ± 5%
V
Where:
IN
P
On
Temperature Rise = 49.2
= 3.3V
V
LDO
V
V
OUT(MIN)
C
10 µF
Package Type = 3x3DFN8
P
DROPOUT (max)
IN(MAX)
V
V
1
APPLICATION CIRCUITS/
ISSUES
Typical Application
V
Power Calculations
DISS
OUT
IN
P
=
IN
LDO
APPLICATION CONDITIONS
POWER DISSIPATION
maximum = 3.465V
(
minimum = 3.135V
V
(typical) = 2.5V
(typical) = 1.2W
IN MAX )
1
2
3
4
MCP1727-2.5
(
= LDO Pass device internal
= Maximum input voltage
= LDO minimum output voltage
I
V
V
SHDN
GND PWRGD
OUT
IN
IN
power dissipation
Typical Application Circuit.
)
= 0.525V
= 1.5A maximum
C
–
Sense
Equation 5-1
DELAY
V
V
OUT
OUT MIN
°
8
7
6
5
C
(
)
1000 pF
C
) I
10kΩ
×
3
V
can be used to
R
OUT
OUT MAX )
1
= 2.5V @ 1.5A
PWRGD
(
C
10 µF
)
2
In addition to the LDO pass element power dissipation,
there is power dissipation within the MCP1727 as a
result of quiescent or ground current. The power
dissipation as a result of the ground current can be
calculated using the following equation:
EQUATION 5-2:
The total power dissipated within the MCP1727 is the
sum of the power dissipated in the LDO pass device
and the P(I
construction, the typical I
120 µA. Operating at a maximum of 3.465V results in a
power dissipation of 0.49 milli-Watts. For most
applications, this is small compared to the LDO pass
device power dissipation and can be neglected.
The
temperature specified for the MCP1727 is +125
estimate the internal junction temperature of the
MCP1727, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (Rθ
from junction to ambient for the 3x3 DFN package is
estimated at 41
EQUATION 5-3:
Where:
T
P
T
J(MAX)
TOTAL
V
AMAX
Rθ
maximum
IN(MAX)
P
JA
T
I(GND
J MAX
I
VIN
(
JA
= Maximum continuous junction
= Total device power dissipation
= Thermal resistance from junction to
= Maximum ambient temperature
GND
P
) of the device. The thermal resistance
I GND
°
temperature
ambient
(
C/W.
)
= Power dissipation due to the
= Maximum input voltage
= Current flowing in the V
) term. Because of the CMOS
=
continuous
)
P
quiescent current of the LDO
with no LDO output current
(LDO quiescent current)
TOTAL
=
© 2007 Microchip Technology Inc.
V
IN MAX
GND
(
×
Rθ
for the MCP1727 is
)
JA
operating
×
+
I
VIN
T
AMAX
IN
junction
pin
°
C
.
To