TISP8211MDR-S Bourns Inc., TISP8211MDR-S Datasheet

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TISP8211MDR-S

Manufacturer Part Number
TISP8211MDR-S
Description
SURGE PROT THYRIST POS V SLIC
Manufacturer
Bourns Inc.

Specifications of TISP8211MDR-S

Technology
Mixed Technology
Number Of Circuits
1
Applications
SLIC
Package / Case
8-SOIC (3.9mm Width)
Breakover Current Ibo Max
11 A
Rated Repetitive Off-state Voltage Vdrm
120 V
Off-state Leakage Current @ Vdrm Idrm
0.005 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power (watts)
-
Voltage - Working
-
Voltage - Clamping
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
TISP8211MDR-STR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TISP8211MDR-S
Manufacturer:
BOURNS/伯恩斯
Quantity:
20 000
Surface Mount Small-Outline Package
The TISP8200M/TISP8201M combination has been designed to protect
dual polarity supply rail monolithic SLICs (Subscriber Line Interface
Circuits) against overvoltages on the telephone line caused by lightning,
a.c. power contact and induction. Protection against negative
overvoltages is given by the TISP8200M. Protection against positive
overvoltages is given by the TISP8201M. Both parts are in 8-pin small-
outline surface mount packages.
The TISP8200M has an array of two buffered P-gate SCRs with a
common anode connection. Each SCR cathode and gate has a separate
terminal connection. The NPN buffer transistors reduce the gate supply
current.
In use, the cathodes of the TISP8200M SCRs are connected to the two
conductors of the POTS line (see applications information). The gates are
connected to the appropriate negative voltage battery feed of the SLIC
driving the line conductor pair. This ensures that the TISP8200M
protection voltage tracks the SLIC negative supply voltage. The anode of
the TISP8200M is connected to the SLIC common.
High Performance Protection for SLICs with +ve & -ve Battery
Supplies
TISP8200M, Negative Overvoltage Protector
– Wide 0 to -90 V Programming Range
– Low 5 mA max. Gate Triggering Current
– High -150 mA min. Holding Current
TISP8201M, Positive Overvoltage Protector
– Wide 0 to +90 V Programming Range
– Low -5 mA max. Gate Triggering Current
– 20 mA min. Holding Current
Rated for International Surge Wave Shapes
Description
How To Order
TISP8200M
TISP8201M
Wave Shape
10/1000 µs
Device
10/700 µs
2/10 µs
............................................ UL Recognized Components
D (8-pin Small-Outline)
D (8-pin Small-Outline)
Telcordia GR-1089-CORE 210
Telcordia GR-1089-CORE
ITU-T K.20, K.21 & K.45
Package
Standard
I
70
45
tsp
Embossed Tape Reeled
Embossed Tape Reeled
A
TISP8200M & TISP8201M
Carrier
FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
TISP8200MDR-S
TISP8201MDR-S
TISP8200M D Package (Top View)
TISP8200M Device Symbol
TISP8201M D Package (Top View)
TISP8201M Device Symbol
Customers should verify actual device performance in their specific applications.
Order As
TISP8201M, BUFFERED N-GATE SCR DUAL
TISP8200M, BUFFERED P-GATE SCR DUAL
COMPLEMENTARY BUFFERED-GATE SCRS
G1
G2
G1
G2
A1
A2
NC - No internal connection
K1
K2
NC - No internal connection
A
A
K
K
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
1
1
3
4
3
4
2
2
K1
K2
A1
A2
SDRXAJB
8
7
6
5
8
7
6
5
MAY 1998 - REVISED JANUARY 2007
SDRXAKB
NC
K
K
NC
NC
A
A
NC
G1
G2
G1
G2
MDRXALC
MDRXAKC

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TISP8211MDR-S Summary of contents

Page 1

High Performance Protection for SLICs with +ve & -ve Battery Supplies TISP8200M, Negative Overvoltage Protector – Wide 0 to -90 V Programming Range – Low 5 mA max. Gate Triggering Current – High -150 mA min. Holding Current TISP8201M, Positive ...

Page 2

TISP8200M & TISP8201M Description (Continued) Negative overvoltages are initially clipped close to the SLIC negative supply by emitter follower action of the NPN buffer transistor. If sufficient clipping current flows, the SCR will regenerate and switch into a low voltage ...

Page 3

TISP8200M & TISP8201M Absolute Maximum Ratings for TISP8201M Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak on-state pulse current, (see Notes 1 and 2) 10/1000 ...

Page 4

TISP8200M & TISP8201M Electrical Characteristics for TISP8200M Parameter I Off-state current Reverse current Breakover voltage dv/dt = -250 V/ms, Source Resistance = 300 Ω (BO) V ...

Page 5

TISP8200M & TISP8201M Parameter Measurement Information V GK(BO (BO) Quadrant III Switching Characteristic V RRM -v I RRM Quadrant III Blocking Characteristic + TSM I TSP -i ...

Page 6

TISP8200M & TISP8201M Operation of SLICs using Positive and Negative Voltage Supply Rails Figure 3 shows a typical powering arrangement for a multi-supply rail SLIC. V BATR is a positive supply and V BATL and V BATH are negative supplies. ...

Page 7

TISP8200M & TISP8201M SLIC Parameter Values The table below shows some details of currently available SLICs using positive and negative supply rails. Manufacturer SLIC SERIES SLIC # Data Sheet Issue Short Circuit Current V max. BATH V max. BATR V ...

Page 8

TISP8200M & TISP8201M Operation of Gated Protectors (Continued) RING TIP AI8XAD The negative protection voltage, V (BO) , will be the sum of the gate supply (V BATH ) and the TISP8200M peak gate(terminal)-cathode voltage ( Under a.c. ...

Page 9

TISP8200M & TISP8201M Voltage Stress Levels on the TISP8200M and TISP8201M (Continued) Testing transistor CB and SCR AK off state: SCR blocking junction does not break down during this period, a d.c. test for off-state current can be applied at ...

Page 10

TISP8200M & TISP8201M TISP8200M and TISP8201M Voltage Overshoot Figure 9 shows typical overshoots on a 100 A 2/10 waveshape. Both devices are under 10 V peak, which meets the needs of the SLICs listed earlier. Line Protection with TISP8200M and ...

Page 11

TISP8200M & TISP8201M Device Symbolization Code Devices are coded as below. MECHANICAL DATA Device Symbolization TISP8200M 8200M TISP8201M 8201M “TISP” trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. “Bourns” is ...

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