ALD1106SBL Advanced Linear Devices Inc, ALD1106SBL Datasheet

ALD1106SBL

Manufacturer Part Number

ALD1106SBL

Description

MOSFET 2N-CH 13.2V QUAD 14SOIC

Manufacturer

Advanced Linear Devices Inc

Datasheet

1.ALD1106PBL.pdf (4 pages)

Specifications of ALD1106SBL

Fet Type

4 N-Channel (H-Bridge)

Fet Feature

Standard

Drain To Source Voltage (vdss)

13.2V

Vgs(th) (max) @ Id

1V @ 1µA

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

14-SOIC (0.154", 3.90mm Width)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Current - Continuous Drain (id) @ 25° C

Rds On (max) @ Id, Vgs

Other names

1014-1013

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GENERAL DESCRIPTION

The ALD1106/ALD1116 are monolithic quad/dual N-channel enhance-

ment mode matched MOSFET transistor arrays intended for a broad range

of precision analog applications. The ALD1106/ALD1116 offer high input

impedance and negative current temperature coefficient. The transistor

pairs are matched for minimum offset voltage and differential thermal

response, and they are designed for switching and amplifying applications

in +2V to +12V systems where low input bias current, low input capacitance

and fast switching speed are desired. These MOSFET devices feature very

large (almost infinite) current gain in a low frequency, or near DC, operating

environment. The ALD1106/ALD1116 are building blocks for differential

amplifier input stages, transmission gates, and multiplexer applications,

current sources and many precision analog circuits.

FEATURES

• Low threshold voltage of 0.7V

• Low input capacitance

• Low Vos 2mV typical

• High input impedance -- 10

• Negative current (I

• Enhancement-mode (normally off)

• DC current gain 10

• Low input and output leakage currents

ORDERING INFORMATION

* Contact factory for industrial temperature range.

BLOCK DIAGRAM

(2)

-55 C to +125 C

8-Pin CERDIP

Package

ALD1116 DA

14-Pin CERDIP

Package

ALD1106 DB

(1)

(3)

INEAR

DVANCED

EVICES,

V - (4)

Operating Temperature Range*

QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY

) temperature coefficient

(12)

(14)

NC.

0 C to +70 C

8-Pin Plastic Dip

Package

ALD1116 PA

14-Pin Plastic Dip

Package

ALD1106 PB

ALD1106

(13)

V + (11)

typical

(9)

(10)

(8)

V - (4)

0 C to +70 C

8-Pin SOIC

Package

ALD1116 SA

14-Pin SOIC

Package

ALD1106 SB

(7)

(5)

(6)

PIN CONFIGURATION

BLOCK DIAGRAM

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Voltage choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog signal processing

D N4

G N4

G N1

D N1

S N4

S N1

(2)

DA, PA, SA PACKAGE

DB, PB, SB PACKAGE

(1)

ALD1116

ALD1106

(3)

ALD1116

ALD1106/ALD1116

V - (4)

V + (5)

(6)

(8)

(7)

D N2

S N2

D N2

S N2

D N3

S N3

G N2

G N3

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ALD1106SBL Summary of contents

Page 1

A DVANCED L INEAR D I EVICES, NC. QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION The ALD1106/ALD1116 are monolithic quad/dual N-channel enhance- ment mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 ...

Page 2

ABSOLUTE MAXIMUM RATINGS Drain-source voltage Gate-source voltage Power dissipation Operating temperature range Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS unless otherwise specified A Parameter Symbol Min Gate Threshold V ...

Page 3

TYPICAL PERFORMANCE CHARACTERISITCS OUTPUT CHARACTERISTICS DRAIN SOURCE VOLTAGE (V) FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE ...

Page 4

ALD1106/ALD1116 Advanced Linear Devices 4 ...

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