ALD1106SBL Advanced Linear Devices Inc, ALD1106SBL Datasheet - Page 3

• Manufacturer Part Number: ALD1106SBL
• Description: MOSFET 2N-CH 13.2V QUAD 14SOIC
• Manufacturer: Advanced Linear Devices Inc

Specifications of ALD1106SBL

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 13.2V
• Vgs(th) (max) @ Id: 1V @ 1µA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Other names: 1014-1013

ALD1106/ALD1116
0.5
0.2
100
20
10
15
10
20
0.1
10
5
2
1
0
5
1
0
0
0
R
T
T
V
V
V
f = 1KHz
DS (ON)
FORWARD TRANSCONDUCTANCE
A
V
T
A
DRAIN SOURCE ON RESISTANCE
DS
BS
BS
BS
A
= +125 C
vs. DRAIN SOURCE VOLTAGE
= +25 C
= 25 C
OUTPUT CHARACTERISTICS
= 0.2V
= 0V
2
= 0V
2
2
= 0V
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE VOLTAGE (V)
GATE SOURCE VOLTAGE (V)
vs. GATE SOURCE VOLTAGE
4
4
4
I
T
DS
A
TYPICAL PERFORMANCE CHARACTERISITCS
= +25 C
= 1mA
6
6
6
V
GS
8
8
8
= 12V
I
10V
DS
T
8V
6V
4V
2V
A
= 10mA
= +125 C
10
10
10
Advanced Linear Devices
12
12
12
-1000
1000
1000
-500
500
100
20
15
10
10
5
0
0
1
-160
-50
0
V
V
V
BS
DS
GS
-25
TRANSFER CHARACTERISTIC
V
T
= 0V
A
BS
= +12V
= V
0.8
LOW VOLTAGE OUTPUT
OFF DRAIN CURRENT vs.
DRAIN SOURCE VOLTAGE (mV)
AMBIENT TEMPERATURE
= 25 C
AMBIENT TEMPERATURE ( C)
WITH SUBSTRATE BIAS
-80
GATE SOURCE VOLTAGE (V)
= 0V
BS
CHARACTERISTICS
0
= 0V
-2V
1.6
+25
-4V
V
GS
0
-6V
= 12V
+50
2.4
-8V
-10V
-12V
+75
80
V
T
3.2
GS
A
+100
= 25 C
= V
4V
2V
6V
3
DS
+125
160
4.0