SI4848DY-T1-GE3 Vishay, SI4848DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4848DY-T1-GE3
• Description: MOSFET N-CH 150V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4848DY-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.7A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 68mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 1.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4848DY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71356
S09-0870-Rev. C, 18-May-09
0.15
0.12
0.09
0.06
0.03
0.00
20
16
12
50
10
8
4
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 3.5 A
On-Resistance vs. Drain Current
0.2
= 75 V
5
6
V
SD
V
Q
GS
g
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
I
D
= 6 V
T
J
- Drain Current (A)
Gate Charge
10
12
= 150 °C
0.6
15
18
0.8
V
GS
T
20
24
= 10 V
J
1.0
= 25 °C
25
1.2
30
1200
0.25
0.20
0.15
0.10
0.05
0.00
900
600
300
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 3.5 A
C
= 10 V
rss
30
2
V
V
GS
DS
0
T
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
60
4
C
50
C
Vishay Siliconix
oss
iss
90
I
D
6
75
= 3.5 A
Si4848DY
100
www.vishay.com
120
8
125
150
150
10
3