SI4848DY-T1-GE3 Vishay, SI4848DY-T1-GE3 Datasheet - Page 4
SI4848DY-T1-GE3
Manufacturer Part Number
SI4848DY-T1-GE3
Description
MOSFET N-CH 150V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4848DY-T1-E3.pdf
(5 pages)
Specifications of SI4848DY-T1-GE3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
85 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
2.7A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
68mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
1.5W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4848DY-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4848DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
SI4848DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4848DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71356.
www.vishay.com
4
- 0.5
- 1.0
- 1.5
1.0
0.5
0.0
0.01
- 50
0.01
0.1
0.1
2
1
2
1
10
10
- 25
-4
-4
0.05
0.05
0.02
Duty Cycle = 0.5
0.1
0.02
0.2
Duty Cycle = 0.5
0.2
0.1
0
Threshold Voltage
T
Single Pulse
J
25
- Temperature (°C)
10
10
Single Pulse
-3
-3
50
I
D
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
Normalized Thermal Transient Impedance, Junction-to-Foot
10
100
10
-2
-2
125
150
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
10
-1
-1
1
60
50
40
30
20
10
1
0
0.01
10
0.1
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
1
A
S09-0870-Rev. C, 18-May-09
= P
1
t
2
Document Number: 71356
DM
100
Z
thJA
thJA
100
t
t
1
2
(t)
= 68 °C/W
10
1000
600
100