APT2X61DQ100J Microsemi Power Products Group, APT2X61DQ100J Datasheet - Page 3

• Manufacturer Part Number: APT2X61DQ100J
• Description: DIODE DUAL PAR 60A 1000V SOT-227
• Manufacturer: Microsemi Power Products Group

Specifications of APT2X61DQ100J

• Voltage - Forward (vf) (max) @ If: 2.8V @ 60A
• Current - Reverse Leakage @ Vr: 100µA @ 1000V
• Current - Average Rectified (io) (per Diode): 60A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Reverse Recovery Time (trr): 235ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT2X61DQ100JMI; APT2X61DQ100JMI

Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
6000
5000
4000
3000
2000
1000
200
180
160
140
120
100
400
350
300
250
200
150
100
Figure 8. Junction Capacitance vs. Reverse Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
50
0
Figure 2. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
I
T
V
V
RRM
J
F
R
F
T
= 125°C
/dt, CURRENT RATE OF CHANGE (A/µs)
t
= 667V
, ANODE-TO-CATHODE VOLTAGE (V)
rr
J
0.5
200
, JUNCTION TEMPERATURE (°C)
25
V
120A
R
T
T
, REVERSE VOLTAGE (V)
1.0
J
J
= 175°C
400
= 125°C
50
1.5
10
600
75
2.0
Q
800
100
rr
2.5
30A
T
J
t
rr
= -55°C
T
Q
1000
J
60A
125
rr
= 25°C
3.0
100 200
1200
3.5
150
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
350
300
250
200
150
100
100
50
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
0
0
25
-di
-di
T
V
J
F
R
F
= 125°C
/dt, CURRENT RATE OF CHANGE(A/µs)
= 667V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75
30A
120A
600
600
100
120A
60A
60A
800
800
125
Duty cycle = 0.5
T
1000
1000
T
J
V
150
J
R
= 175°C
= 125°C
= 667V
30A
1200
1200
175