APT80GP60J Microsemi Power Products Group, APT80GP60J Datasheet

IGBT 600V 151A 462W SOT227

APT80GP60J

Manufacturer Part Number
APT80GP60J
Description
IGBT 600V 151A 462W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT80GP60J

Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 80A
Current - Collector (ic) (max)
151A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
9.84nF @ 25V
Power - Max
462W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT80GP60JMI
APT80GP60JMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT80GP60JDF3
Manufacturer:
VISHAY
Quantity:
10 000
The POWER MOS 7
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
T
Symbol
V
V
SSOA
BV
V
V
J
GE(TH)
CE(ON)
I
V
I
I
,T
I
I
P
GEM
CES
GES
CES
T
CM
C1
C2
GE
CES
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage (V
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
1
CE
CE
CE
APT Website - http://www.advancedpower.com
@ T
= V
= 600V, V
= 600V, V
GE
GE
• 100 kHz operation @ 400V, 39A
• 50 kHz operation @ 400V, 59A
• SSOA rated
C
C
C
GE
GE
= 25°C
J
= 15V, I
= 15V, I
= 25°C
= 110°C
, I
= 150°C
= ±20V)
C
= 2.5mA, T
GE
GE
GE
®
C
C
= 0V, I
= 0V, T
= 0V, T
IGBT
= 80A, T
= 80A, T
C
j
j
j
= 25°C)
= 125°C)
= 1.0mA)
= 25°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
APT80GP60J
MIN
600
3
330A @ 600V
APT80GP60J
-55 to 150
ISOTOP
TYP
4.5
2.2
2.1
±20
±30
600
151
330
462
300
68
®
±100
MAX
2.7
1.0
6
5
"UL Recognized"
G
600V
Amps
Watts
UNIT
Volts
UNIT
Volts
mA
nA
°C
C
E

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APT80GP60J Summary of contents

Page 1

... 600V 0V 25° 600V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com APT80GP60J ISOTOP ® = 25°C unless otherwise specified. C APT80GP60J 600 ±20 ±30 151 68 330 330A @ 600V 462 -55 to 150 300 MIN TYP MAX 600 3 4.5 6 2.2 2.7 2.1 1 ±100 600V " ...

Page 2

... 80A +25° Inductive Switching (125° 400V 15V 80A +125° test circuit. (See Figures 21, 22.) on2 APT80GP60J MIN TYP MAX 9840 735 = 25V 40 7.5 280 65 85 330 600V 116 78 795 1536 1199 29 40 149 84 795 2153 1690 MIN TYP MAX ...

Page 3

... I 40A C= 1 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 0 -50 - 100 T , Junction Temperature (°C) J FIGURE 6, On State Voltage vs Junction Temperature 200 160 120 -50 - 100 125 150 T , CASE TEMPERATURE (°C) C FIGURE 8, DC Collector Current vs Case Temperature APT80GP60J 3 300 125 ...

Page 4

... I , COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 14, Turn Off Energy Loss vs Collector Current 4000 V = 400V +15V 3000 E 80A off 2000 1000 E on2 FIGURE 16, Switching Energy Losses vs Junction Temperature APT80GP60J = V 15V,T =125° 15V,T =25° 110 130 = = T 125°C, V 10V or 15V 25°C, V 10V or 15V ...

Page 5

... RECTANGULAR PULSE DURATION (SECONDS) 190 100 50 0.00119F 0.0354F 10 ° 125 C 0.463F J ° 400V 100 110 130 I , COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT80GP60J 100 200 300 400 500 600 700 Note Duty Factor Peak 1.0 F min(f max max1 f max1 diss f max 2 ...

Page 6

... W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) * Emitter * Emitter Dimensions in Millimeters and (Inches) APT80GP60J Gate Voltage t d(on) 90% Collector Current 10% 5% Collector Voltage V TEST *DRIVER SAME TYPE AS D.U.T. ...

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