APT75GN120JDQ3 Microsemi Power Products Group, APT75GN120JDQ3 Datasheet

APT75GN120JDQ3

Manufacturer Part Number

APT75GN120JDQ3

Description

IGBT 1200V 124A 379W SOT227

Manufacturer

Microsemi Power Products Group

Datasheet

1.APT75GN120JDQ3.pdf (9 pages)

Specifications of APT75GN120JDQ3

Igbt Type

Field Stop and Trench

Configuration

Single

Voltage - Collector Emitter Breakdown (max)

1200V

Vce(on) (max) @ Vge, Ic

2.1V @ 15V, 75A

Current - Collector (ic) (max)

124A

Current - Collector Cutoff (max)

200µA

Input Capacitance (cies) @ Vce

4.8nF @ 25V

Power - Max

379W

Input

Standard

Ntc Thermistor

Mounting Type

Chassis Mount

Package / Case

ISOTOP

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

APT75GN120JDQ3MI
APT75GN120JDQ3MI

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TYPICAL PERFORMANCE CURVES

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra

low V

conduction loss. Easy paralleling is a result of very tight parameter distribution and

a slightly positive V

extremely reliable operation, even in the event of a short circuit fault. Low gate charge

simpliﬁes gate drive design and minimizes losses.

•

• Trench Gate: Low V

• Easy Paralleling

• Intergrated Gate Resistor: Low EMI, High Reliability

Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

Symbol

1200V Field Stop

SSOA

(BR)CES

CE(ON)

GE(TH)

GES

CES

G(int)

CES

CE(ON)

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

and are ideal for low frequency applications that require absolute minimum

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ T

Pulsed Collector Current

Switching Safe Operating Area @ T

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

Gate Threshold Voltage

Collector-Emitter On Voltage (V

Collector Cut-off Current (V

Gate-Emitter Leakage Current (V

Intergrated Gate Resistor

CE(ON)

CE(on)

temperature coefﬁcient. A built-in gate resistor ensures

= V

= 1200V, V

APT Website - http://www.advancedpower.com

= 25°C

= 110°C

= 15V, I

= 150°C

= ±20V)

, I

= 3mA, T

= 0V, I

= 75A, T

= 0V, T

= 25°C)

= 3mA)

= 25°C)

= 125°C)

= 25°C)

= 125°C)

All Ratings: T

= 25°C unless otherwise speciﬁed.

1200

MIN

5.0

1.4

APT75GN120JDQ3

225A @ 1200V

-55 to 150

APT75GN120JDQ3

1200

TYP

±30

124

225

379

300

5.8

1.7

2.0

APT75GN120JDQ3

ISOTOP

1200V

MAX

TBD

200

600

6.5

2.1

"UL Recognized"

file # E145592

Amps

Watts

UNIT

Units

Volts

°C

µA

Ω

Related parts for APT75GN120JDQ3

APT75GN120JDQ3 Summary of contents

Page 1

... 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT75GN120JDQ3 APT75GN120JDQ3 ISOTOP ® 25°C unless otherwise speciﬁed. C APT75GN120JDQ3 1200 ±30 124 57 225 225A @ 1200V 379 -55 to 150 300 MIN TYP MAX 1200 5.0 5.8 6.5 1.4 1.7 2.1 2.0 ...

Page 2

Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP Q 3 Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc SSOA Switching Safe Operating ...

Page 3

V = 15V GE 140 T = -55°C J 120 T = 25°C J 100 T = 125° 0.5 1.0 1.5 2.0 2.5 3 COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, ...

Page 4

V = 15V 800V 25°C or =125° 1.0Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, ...

Page 5

... T = 125 C J ° 6. 800V 1.0Ω 100 110 120 I , COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT75GN120JDQ3 200 400 600 800 1000 1200 1400 , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak θ 1 min (f max f = max1 t d(on ...

Page 6

APT60DQ120 D.U.T. Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t d(off) Collector Voltage 90 10% Collector Current 0 Switching Energy Figure 23, Turn-off Switching Waveforms and Deﬁnitions 10% t ...

Page 7

... RECTANGULAR PULSE DURATION (seconds) RC MODEL Junction temp. (°C) 0.148 Power 0.238 (watts) 0.174 Case temperature. (°C) FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL APT75GN120JDQ3 = 25°C unless otherwise speciﬁed. C APT75GN120JDQ3 60 73 540 MIN TYP MAX 2.8 3.48 2.17 MIN TYP MAX 25°C ...

Page 8

T = 175°C J 120 100 T = 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 26. Forward Current vs. ...

Page 9

... Package Outline W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Emitter/Anode * Emitter/Anode Dimensions in Millimeters and (Inches) APT75GN120JDQ3 D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 4 5 0.25 I RRM 3 2 11.8 (.463) 12.2 (.480) 8 ...

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