APT35GT120JU2

Manufacturer Part NumberAPT35GT120JU2
DescriptionIGBT 1200V 35A 260W SOT-227
ManufacturerMicrosemi Power Products Group
SeriesTrench + Field Stop IGBT®
APT35GT120JU2 datasheets

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Specifications of APT35GT120JU2

Igbt TypeTrench and Field StopConfigurationSingle
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic2.1V @ 15V, 35A
Current - Collector (ic) (max)55ACurrent - Collector Cutoff (max)5mA
Input Capacitance (cies) @ Vce2.53nF @ 25VPower - Max260W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseISOTOP
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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®
ISOTOP
Boost chopper
Trench + Field Stop IGBT
K
G
E
K
E
C
G
ISOTOP
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
C1
Continuous Collector Current
I
C2
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
IF
Maximum Average Forward Current
A V
IF
RMS Forward Current (Square wave, 50% duty)
RMS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT35GT120JU2
®
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
C
Brake switch
Features
Trench + Field Stop IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
®
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
T
= 25°C
C
T
= 80°C
C
T
= 25°C
C
T
= 25°C
C
Duty cycle=0.5
T
= 80°C
C
www.microsemi.com
V
= 1200V
CES
I
= 35A @ Tc = 80°C
C
®
Technology
of V
C
CEsat
Max ratings
Unit
1200
V
55
A
35
80
±20
V
260
W
27
A
34
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APT35GT120JU2 Summary of contents

  • Page 1

    ... Maximum Power Dissipation D IF Maximum Average Forward Current RMS Forward Current (Square wave, 50% duty) RMS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT35GT120JU2 ® Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction C • ...

  • Page 2

    ... Turn-off Delay Time d(off) T Fall Time f T Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off APT35GT120JU2 = 25°C unless otherwise specified j Test Conditions 1200V 25°C V =15V 35A T = 125° ...

  • Page 3

    ... ISOL T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight Typical IGBT Performance Curve APT35GT120JU2 Test Conditions I = 30A 60A 30A T = 125° ...

  • Page 4

    ... Effective Transient Thermal Impedance, Junction to Pulse Duration 0.5 0.9 0.45 0.4 0.7 0.35 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 Single Pulse 0.05 0.05 0 0.00001 0.0001 0.001 rectangular Pulse Duration (Seconds) www.microsemi.com APT35GT120JU2 Output Characteristics 125° =17V (V) CE Energy losses vs Collector Current ...

  • Page 5

    ... Typical Diode Performance Curve APT35GT120JU2 www.microsemi.com ...

  • Page 6

    ... APT35GT120JU2 www.microsemi.com ...

  • Page 7

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT35GT120JU2 W=4.1 (.161) W=4.3 (.169) H=4 ...