APT150GN60JDQ4 Microsemi Power Products Group, APT150GN60JDQ4 Datasheet

APT150GN60JDQ4

Manufacturer Part Number

APT150GN60JDQ4

Description

IGBT 600V 220A 536W SOT227

Manufacturer

Microsemi Power Products Group

Datasheet

1.APT150GN60JDQ4.pdf (9 pages)

Specifications of APT150GN60JDQ4

Igbt Type

Field Stop and Trench

Configuration

Single

Voltage - Collector Emitter Breakdown (max)

600V

Vce(on) (max) @ Vge, Ic

1.85V @ 15V, 150A

Current - Collector (ic) (max)

220A

Current - Collector Cutoff (max)

50µA

Input Capacitance (cies) @ Vce

9.2nF @ 25V

Power - Max

536W

Input

Standard

Ntc Thermistor

Mounting Type

Chassis Mount

Package / Case

ISOTOP

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

APT150GN60JDQ4MI
APT150GN60JDQ4MI

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT150GN60JDQ4

Manufacturer:

Microsemi Power Products Group

Quantity:

135

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT150GN60JDQ4

Manufacturer:

APT

Quantity:

1 000

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

APT150GN60JDQ4

Quantity:

107

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TYPICAL PERFORMANCE CURVES

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra

low V

conduction loss. Easy paralleling is a result of very tight parameter distribution and

a slightly positive V

extremely reliable operation, even in the event of a short circuit fault. Low gate charge

simpliﬁes gate drive design and minimizes losses.

•

• Trench Gate: Low V

• Easy Paralleling

• Intergrated Gate Resistor: Low EMI, High Reliability

Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

Symbol

600V Field Stop

SSOA

(BR)CES

CE(ON)

GE(TH)

GES

CES

G(int)

CES

CE(ON)

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

and are ideal for low frequency applications that require absolute minimum

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ T

Pulsed Collector Current

Switching Safe Operating Area @ T

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

Gate Threshold Voltage

Collector-Emitter On Voltage (V

Collector Cut-off Current (V

Gate-Emitter Leakage Current (V

Intergrated Gate Resistor

CE(ON)

CE(on)

temperature coefﬁcient. A built-in gate resistor ensures

= V

= 600V, V

APT Website - http://www.advancedpower.com

= 25°C

= 110°C

= 15V, I

= 175°C

= ±20V)

, I

= 2400µA, T

= 0V, I

= 0V, T

= 150A, T

= 4mA)

= 25°C)

= 125°C)

= 25°C)

= 125°C)

All Ratings: T

= 25°C unless otherwise speciﬁed.

1.05

MIN

600

5.0

APT150GN60JDQ4

450A @ 600V

-55 to 175

1.45

1.65

TYP

600

±30

220

123

450

536

300

5.8

APT150GN60JDQ4

ISOTOP

600V

MAX

TBD

1.85

600

6.5

"UL Recognized"

file # E145592

Amps

Watts

UNIT

Units

Volts

°C

µA

Ω

Related parts for APT150GN60JDQ4

APT150GN60JDQ4 Summary of contents

Page 1

... 600V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 600V APT150GN60JDQ4 APT150GN60JDQ4 ISOTOP ® 25°C unless otherwise speciﬁed. C APT150GN60JDQ4 600 ±30 220 123 450 450A @ 600V 536 -55 to 175 300 MIN TYP MAX 600 5.0 5.8 6.5 1.05 1.45 1.85 1.65 ...

Page 2

... +25° Inductive Switching (125° 400V 15V 150A 1.0Ω +125° nor gate driver impedance. (MIC4452) G(int) APT150GN60JDQ4 MIN TYP MAX 9200 350 = 25V 300 9.5 970 65 510 , 450 = 600V 44 110 430 60 7 8810 8615 4295 44 110 480 95 ...

Page 3

V = 15V T = -55° 300 T = 25°C J 250 T = 125°C J 200 T = 175°C J 150 100 0.5 1.0 1.5 2.0 2.5 3 COLLECTER-TO-EMITTER VOLTAGE (V) ...

Page 4

V = 15V 400V 25°C or 125° 1.0Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, Turn-On ...

Page 5

... RECTANGULAR PULSE DURATION (SECONDS 0.00770 ° 125 C J ° 0.300 V = 400V 1.0Ω COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT150GN60JDQ4 100 200 300 400 500 600 700 , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak θ 1 min (f max f = max1 t d(on ...

Page 6

APT100DQ60 90% Gate Voltage t d(off) 90% Collector Voltage t f 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Deﬁnitions Figure 22, Turn-on Switching Waveforms and Deﬁnitions T = 125°C J Gate Voltage 10 ...

Page 7

... RECTANGULAR PULSE DURATION (seconds) RC MODEL Junction temp (°C) 0.0673 Power 0.188 (watts) 0.0743 Case temperature (°C) FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL APT150GN60JDQ4 = 25°C unless otherwise speciﬁed. C APT100GN60LDQ4 100 146 1000 MIN TYP MAX 1.83 2.33 1.47 MIN TYP MAX = 25° ...

Page 8

T = 25°C J 250 200 T = 175°C J 150 T = 125°C J 100 -55° 0.5 1.0 1.5 2 ANODE-TO-CATHODE VOLTAGE (V) F Figure 25. Forward Current vs. Forward ...

Page 9

... H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Emitter/Anode * Emitter/Anode Dimensions in Millimeters and (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 APT150GN60JDQ4 D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 11.8 (.463) 12 ...

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