APT200GN60J Microsemi Power Products Group, APT200GN60J Datasheet

IGBT 600V 283A 682W SOT227

APT200GN60J

Manufacturer Part Number
APT200GN60J
Description
IGBT 600V 283A 682W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT200GN60J.pdf (6 pages)

Specifications of APT200GN60J

Igbt Type
Field Stop and Trench
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.85V @ 15V, 200A
Current - Collector (ic) (max)
283A
Current - Collector Cutoff (max)
25µA
Input Capacitance (cies) @ Vce
14.1nF @ 25V
Power - Max
682W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT200GN60JMI
APT200GN60JMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT200GN60J
Manufacturer:
APT
Quantity:
12 500
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
APT200GN60J
Quantity:
103
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT200GN60JDQ4
Manufacturer:
APT
Quantity:
25
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
APT200GN60JDQ4
Quantity:
108
TYPICAL PERFORMANCE CURVES
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses
•
• Trench Gate: Low V
• Easy Paralleling
• 5µs Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliability
• 175°C Rated
Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
600V Field Stop
SSOA
(BR)CES
R
V
J
GE(TH)
CE(ON)
I
I
V
I
,T
I
I
P
CES
GES
GINT
CES
CM
C1
C2
GE
CE(ON)
D
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
and are ideal for low frequency applications that require absolute minimum
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
CE(ON)
CE(on)
temperature coefficient. A built-in gate resistor ensures
1
(V
CE
CE
CE
= V
= 600V, V
= 600V, V
APT Website - http://www.advancedpower.com
®
GE
GE
GE
GE
C
C
GE
GE
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 15V, I
= 15V, I
= 175°C
= ±20V)
, I
C
GE
= 3.2mA, T
GE
GE
C
C
C
C
= 0V, I
= 0V, T
= 0V, T
= 200A, T
= 200A, T
= 100A, T
= 100A, T
C
j
j
j
= 4mA)
= 25°C)
= 125°C)
= 25°C)
j
j
j
j
= 25°C)
= 125°C)
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
1.05
MIN
600
5
APT200GN60J
600A @600V
-55 to 175
1.45
1.65
1.15
1.19
600
±20
283
158
600
682
TYP
5.8
2
APT200GN60J
ISOTOP
G
APT200GN60J
MAX
1.85
TBD
600
6.5
25
®
600V
"UL Recognized"
file # E145592
C
E
Amps
Watts
UNIT
Volts
UNIT
Volts
°C
µA
nA
Ω

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APT200GN60J Summary of contents

Page 1

... 600V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 600V APT200GN60J APT200GN60J ISOTOP ® 25°C unless otherwise specified. C APT200GN60J 600 ±20 283 158 600 600A @600V 682 -55 to 175 MIN TYP MAX 600 5 5.8 6.5 1.05 1.45 1.85 1.65 1.15 1 ...

Page 2

Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res Gate-to-Emitter Plateau Voltage V GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Switching Safe Operating Area ...

Page 3

V = 15V T = -55° 350 T = 25°C J 300 T = 125°C J 250 T = 175°C J 200 150 100 0.5 1.0 1.5 2.0 2 COLLECTER-TO-EMITTER VOLTAGE (V) ...

Page 4

V = 15V 400V 25°C or 125° 1.0Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, Turn-On ...

Page 5

... RECTANGULAR PULSE DURATION (SECONDS) 60 0.0120 10 0.483 ° 125 C J ° 8. 400V 1.0Ω COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT200GN60J 100 200 300 400 500 600 700 , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak θ 1 min (f max f = max1 t d(on ...

Page 6

... Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t d(off) Collector Current 90 10% Collector Voltage Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions T = 125° APT200GN60J Gate Voltage 10% t d(on Collector Current 90% 5% 10% 5% Collector Voltage Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions T = 125°C ...

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