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APT200GN60J
APT200GN60J | |
|---|---|
| Manufacturer Part Number | APT200GN60J |
| Description | IGBT 600V 283A 682W SOT227 |
| Manufacturer | Microsemi Power Products Group |
| APT200GN60J datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
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- If you still have any questions - please contact us
Specifications of APT200GN60J | |||
|---|---|---|---|
| Igbt Type | Field Stop and Trench | Configuration | Single |
| Voltage - Collector Emitter Breakdown (max) | 600V | Vce(on) (max) @ Vge, Ic | 1.85V @ 15V, 200A |
| Current - Collector (ic) (max) | 283A | Current - Collector Cutoff (max) | 25µA |
| Input Capacitance (cies) @ Vce | 14.1nF @ 25V | Power - Max | 682W |
| Input | Standard | Ntc Thermistor | No |
| Mounting Type | Chassis Mount | Package / Case | ISOTOP |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Other names | APT200GN60JMI APT200GN60JMI |
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TYPICAL PERFORMANCE CURVES
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
and are ideal for low frequency applications that require absolute minimum
CE(ON)
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
temperature coefficient. A built-in gate resistor ensures
CE(ON)
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses
•
600V Field Stop
• Trench Gate: Low V
CE(on)
• Easy Paralleling
• 5µs Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliability
• 175°C Rated
Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor
MAXIMUM RATINGS
Parameter
Symbol
V
Collector-Emitter Voltage
CES
V
Gate-Emitter Voltage
GE
I
Continuous Collector Current @ T
C1
I
Continuous Collector Current @ T
C2
I
Pulsed Collector Current
CM
Switching Safe Operating Area @ T
SSOA
P
Total Power Dissipation
D
T
,T
Operating and Storage Junction Temperature Range
J
STG
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
V
Collector-Emitter Breakdown Voltage (V
(BR)CES
V
Gate Threshold Voltage
GE(TH)
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
V
CE(ON)
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
I
CES
Collector Cut-off Current (V
I
Gate-Emitter Leakage Current (V
GES
R
Intergrated Gate Resistor
GINT
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
®
All Ratings: T
= 25°C
C
= 110°C
C
1
= 175°C
J
= 0V, I
= 4mA)
GE
C
(V
= V
, I
= 3.2mA, T
= 25°C)
CE
GE
C
j
= 15V, I
= 200A, T
= 25°C)
GE
C
j
= 15V, I
= 200A, T
= 125°C)
GE
C
j
= 15V, I
= 100A, T
= 25°C)
GE
C
j
= 15V, I
= 100A, T
= 125°C)
GE
C
j
2
= 600V, V
= 0V, T
= 25°C)
CE
GE
j
= 600V, V
= 0V, T
= 125°C)
CE
GE
j
= ±20V)
GE
APT Website - http://www.advancedpower.com
600V
APT200GN60J
APT200GN60J
ISOTOP
®
G
= 25°C unless otherwise specified.
C
APT200GN60J
600
±20
283
158
600
600A @600V
682
-55 to 175
MIN
TYP
MAX
600
5
5.8
6.5
1.05
1.45
1.85
1.65
1.15
1.19
25
2
TBD
600
2
"UL Recognized"
file # E145592
C
E
UNIT
Volts
Amps
Watts
°C
UNIT
Volts
µA
nA
Ω
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APT200GN60J Summary of contents |
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