APT35GP120J Microsemi Power Products Group, APT35GP120J Datasheet

IGBT 1200V 64A 284W SOT227

APT35GP120J

Manufacturer Part Number
APT35GP120J
Description
IGBT 1200V 64A 284W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT35GP120J

Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 35A
Current - Collector (ic) (max)
64A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.24nF @ 25V
Power - Max
284W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT35GP120JMI
APT35GP120JMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT35GP120J
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT35GP120J
Manufacturer:
APT
Quantity:
15 500
Part Number:
APT35GP120JDQ2
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT35GP120JDX
Manufacturer:
SEMIKRON
Quantity:
530
Part Number:
APT35GP120JFD2
Manufacturer:
APT
Quantity:
15 500
The POWER MOS 7
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
RBSOA
T
Symbol
V
V
BV
V
V
J
GE(TH)
CE(ON)
I
V
I
I
,T
I
I
P
GEM
CES
GES
CES
T
CM
C1
C2
GE
CES
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Bias Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
1
(V
CE
CE
CE
APT Website - http://www.advancedpower.com
@ T
= V
= 1200V, V
= 1200V, V
GE
GE
• 50 kHz operation @ 800V, 14A
• 20 kHz operation @ 800V, 25A
• RBSOA rated
C
C
C
GE
GE
= 25°C
= 25°C
= 110°C
= 15V, I
= 15V, I
, I
= ±20V)
J
C
= 150°C
GE
= 1mA, T
GE
GE
C
C
= 0V, I
®
= 35A, T
= 35A, T
= 0V, T
= 0V, T
IGBT
j
C
= 25°C)
= 250µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
APT35GP120J
= 25°C unless otherwise specified.
1200
MIN
3
140A @ 960V
APT35GP120J
-55 to 150
ISOTOP
TYP
1200
4.5
3.3
±20
±30
140
284
300
3
64
29
®
2500
±100
MAX
250
3.9
6
"UL Recognized"
G
1200V
Amps
Watts
UNIT
UNIT
Volts
Volts
µA
nA
°C
C
E

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APT35GP120J Summary of contents

Page 1

... 1200V 0V 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com APT35GP120J "UL Recognized" ISOTOP ® = 25°C unless otherwise specified. C APT35GP120J 1200 ±20 ± 140 140A @ 960V 284 -55 to 150 300 MIN TYP MAX 1200 3 4.5 6 3.3 3 250 2 2500 ± ...

Page 2

... Inductive Switching (25° 600V 15V 35A +25° Inductive Switching (125° 600V 15V 35A +125° APT35GP120J MIN TYP MAX 3240 248 = 25V 31 7.5 150 21 62 140 960V 750 1305 680 16 20 147 75 750 2132 1744 MIN TYP MAX .44 N/A 29.2 ...

Page 3

... JUNCTION TEMPERATURE (°C) J FIGURE 7, Breakdown Voltage vs. Junction Temperature 15V -55° 25°C. <0.5 % DUTY CYCLE I 17. FIGURE 6, On State Voltage vs Junction Temperature 100 125 150 FIGURE 8, DC Collector Current vs Case Temperature APT35GP120J 10V. 250µs PULSE TEST 70 <0.5 % DUTY CYCLE =25° =125° ...

Page 4

... COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 14, Turn Off Energy Loss vs Collector Current 5000 V CE 70A 4000 3000 E off 2000 35A off 1000 E off 17. FIGURE 16, Switching Energy Losses vs Junction Temperature APT35GP120J V =15V,T =125° 10V,T =125° =15V,T =25° 10V,T =25° 600V = 5 20 ...

Page 5

... V CE Figure 18, Reverse Bias Safe Operating Area SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) 100 0.00997F 50 0.158F 10 1.958F T = 125 800V Figure 20, Operating Frequency vs Collector APT35GP120J , COLLECTOR TO EMITTER VOLTAGE Note Duty Factor Peak 1 min(f max f max1 ° C max 2 E ° diss R 20 ...

Page 6

... W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) * Emitter * Emitter Dimensions in Millimeters and (Inches) APT35GP120J Gate Voltage 10% t d(on 90% Collector Current 10 Collector Voltage V TEST *DRIVER SAME TYPE AS D.U.T. ...

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