APT45GP120J Microsemi Power Products Group, APT45GP120J Datasheet

IGBT 1200V 75A 329W SOT227

APT45GP120J

Manufacturer Part Number
APT45GP120J
Description
IGBT 1200V 75A 329W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT45GP120J.pdf (6 pages)

Specifications of APT45GP120J

Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 45A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
3.94nF @ 25V
Power - Max
329W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT45GP120JMI
APT45GP120JMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT45GP120J
Manufacturer:
APT
Quantity:
15 500
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT45GP120JDF2
Manufacturer:
APT
Quantity:
15 500
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT45GP120JDQ2
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT45GP120JDQ2
Manufacturer:
APT
Quantity:
25
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
The POWER MOS 7
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
Symbol
RBSOA
Symbol
T
V
V
BV
V
V
J
V
GE(TH)
CE(ON)
I
I
I
,T
I
I
GEM
P
GES
T
CES
CES
CM
C1
C2
GE
CES
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Bias Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage (V
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
1
CE
CE
CE
APT Website - http://www.advancedpower.com
@ T
= V
= 1200V, V
= 1200V, V
GE
GE
• 50 kHz operation @ 800V, 16A
• 20 kHz operation @ 800V, 30A
• RBSOA rated
C
C
C
GE
GE
= 25°C
= 15V, I
= 15V, I
= 25°C
= 110°C
, I
= ±20V)
C
J
GE
= 1mA, T
= 150°C
GE
GE
®
C
C
= 0V, I
= 45A, T
= 45A, T
= 0V, T
= 0V, T
IGBT
j
C
= 25°C)
j
j
= 500µA)
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
APT45GP120J
C
= 25°C unless otherwise specified.
1200
MIN
3
APT45GP120J
170A @ 960V
-55 to 150
ISOTOP
TYP
4.5
3.3
3.0
1200
±20
±30
170
329
300
75
34
®
2500
±100
MAX
500
3.9
6
"UL Recognized"
G
1200V
Amps
Watts
UNIT
UNIT
Volts
Volts
µA
nA
°C
C
E

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APT45GP120J Summary of contents

Page 1

... 1200V 0V 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com APT45GP120J ISOTOP ® = 25°C unless otherwise specified. C APT45GP120J 1200 ±20 ± 170 170A @ 960V 329 -55 to 150 300 MIN TYP MAX 1200 3 4.5 6 3.3 3.9 3.0 2 500 2 2500 ± ...

Page 2

... Inductive Switching (25° 600V 15V 45A +25° Inductive Switching (125° 600V 15V 45A +125° APT45GP120J MIN TYP MAX 3935 300 = 25V 55 7.5 185 25 80 170 960V 102 38 900 1869 904 18 29 151 79 900 3078 2254 MIN TYP MAX .38 N/A 29.2 UNIT ...

Page 3

... FIGURE 6, On State Voltage vs Junction Temperature 120 100 100 125 FIGURE 8, DC Collector Current vs Case Temperature APT45GP120J 10V. 250µs PULSE TEST <0.5 % DUTY CYCLE T =25° =125° 0.5 1 1.5 2 2.5 3 3 COLLECTER-TO-EMITTER VOLTAGE (V) ...

Page 4

... COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 12, Current Fall Time vs Collector Current V = 600V 100 µ 125°C, V 10V or 15V 25°C, V 10V or 15V COLLECTOR TO EMITTER CURRENT ( 600V CE E 90A V = +15V on2 90A off E 45A off E 45A on2 E 22.5A on2 E 22.5A off 100 T , JUNCTION TEMPERATURE (°C) J APT45GP120J 125 ...

Page 5

... Figure 18, Minimim Switching Safe Operating Area SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) 90 0.000443F 10 0.0269F 0.608F 1 10 Figure 20, Operating Frequency vs Collector Current APT45GP120J V , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak 1.0 10 ° T ...

Page 6

... Emitter 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Emitter Dimensions in Millimeters and (Inches) APT45GP120J 10% t d(on 90% 10 Switching Energy V TEST *DRIVER SAME TYPE AS D.U. ...

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