APT35GP120JDQ2 Microsemi Power Products Group, APT35GP120JDQ2 Datasheet

IGBT 1200V 64A 284W SOT227

APT35GP120JDQ2

Manufacturer Part Number
APT35GP120JDQ2
Description
IGBT 1200V 64A 284W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT35GP120JDQ2

Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 35A
Current - Collector (ic) (max)
64A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
3.24nF @ 25V
Power - Max
284W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT35GP120JDQ2MI
APT35GP120JDQ2MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT35GP120JDQ2
Manufacturer:
Microsemi Power Products Group
Quantity:
135
The POWER MOS 7
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
RBSOA
T
V
V
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Bias Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
POWER MOS 7
1
(V
• RBSOA Rated
CE
CE
CE
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
GE
GE
= 25°C
= 110°C
= 15V, I
= 15V, I
= ±20V)
, I
J
C
= 150°C
GE
= 1mA, T
GE
GE
®
C
C
= 0V, I
IGBT
= 35A, T
= 35A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 350µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
1200
MIN
APT35GP120JDQ2
3
140A @ 960V
-55 to 150
APT35GP120JDQ2
1200
±30
140
284
300
TYP
64
26
4.5
3.3
3
APT35GP120JDQ2
ISOTOP
G
1200V
3000
MAX
±100
350
3.9
6
®
"UL Recognized"
file # E145592
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA

Related parts for APT35GP120JDQ2

APT35GP120JDQ2 Summary of contents

Page 1

... 1200V 0V 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT35GP120JDQ2 APT35GP120JDQ2 ISOTOP ® 25°C unless otherwise specified. C APT35GP120JDQ2 1200 ± 140 140A @ 960V 284 -55 to 150 300 MIN TYP MAX 1200 3 4.5 6 3.3 3 350 2 3000 ±100 "UL Recognized" ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Reverse Bias Safe Operating ...

Page 3

T = 25° 125° 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5 COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J 120 ...

Page 4

V = 15V 600V 25°C or 125° 4.3Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, Turn-On Delay Time ...

Page 5

... Figure 18,Minimim Switching Safe Operating Area SINGLE PULSE RECTANGULAR PULSE DURATION (SECONDS) 100 50 0.00997 0.158 10 ° 125 C J ° 1.958 V = 800V 5Ω COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT35GP120JDQ2 , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor D = Peak θ 1 min (f max f = max1 t d(on max2 diss max max2 0 ...

Page 6

APT30DQ120 D.U.T. Figure 21, Inductive Switching Test Circuit 90% t d(off) 90 10% Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Gate Voltage T = 125 °C J Collector Voltage ...

Page 7

... RECTANGULAR PULSE DURATION (seconds) RC MODEL Junction temp (°C) 0.219 Power 0.468 (watts) 0.341 Case temperature (°C) FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL APT35GP120JDQ2 = 25°C unless otherwise specified. C APT35GP120JDQ2 30 39 210 MIN TYP MAX 2.73 3.41 1.93 MIN TYP MAX = 25°C ...

Page 8

T = 175° 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 25. Forward Current vs. Forward ...

Page 9

... H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Emitter/Anode * Emitter/Anode Dimensions in Millimeters and (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 APT35GP120JDQ2 D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 4 5 0.25 I RRM ...

Related keywords