APT45GP120JDQ2 Microsemi Power Products Group, APT45GP120JDQ2 Datasheet

IGBT 1200V 75A 329W SOT227

APT45GP120JDQ2

Manufacturer Part Number
APT45GP120JDQ2
Description
IGBT 1200V 75A 329W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT45GP120JDQ2.pdf (9 pages)

Specifications of APT45GP120JDQ2

Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 45A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
750µA
Input Capacitance (cies) @ Vce
4nF @ 25V
Power - Max
329W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT45GP120JDQ2MI
APT45GP120JDQ2MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT45GP120JDQ2
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT45GP120JDQ2
Manufacturer:
APT
Quantity:
25
The POWER MOS 7
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
RBSOA
T
V
V
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Biad Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
POWER MOS 7
1
(V
• 100 kHz operation @ 800V, 16A
• 50 kHz operation @ 800V, 30A
• RBSOA Rated
@ T
CE
CE
CE
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
C
®
GE
GE
C
C
= 150°C
GE
GE
= 25°C
= 110°C
= 15V, I
= 15V, I
= ±20V)
, I
J
C
GE
= 150°C
= 1mA, T
GE
GE
®
C
C
= 0V, I
IGBT
= 45A, T
= 45A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 750µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
1200
MIN
APT45GP120JDQ2
3
170A @ 960V
-55 to 150
APT45GP120JDQ2
1200
±30
170
329
300
TYP
75
34
4.5
3.3
3.0
APT45GP120JDQ2
ISOTOP
G
1200V
3000
MAX
±100
750
3.9
6
®
"UL Recognized"
file # E145592
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA

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APT45GP120JDQ2 Summary of contents

Page 1

... 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT45GP120JDQ2 APT45GP120JDQ2 ISOTOP ® 25°C unless otherwise specified. C APT45GP120JDQ2 1200 ± 170 170A @ 960V 329 -55 to 150 300 MIN TYP MAX 1200 3 4.5 6 3.3 3.9 3.0 2 750 2 3000 ± ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Reverse Bias Safe Operating ...

Page 3

T = 25° 125° 0.5 1.0 1.5 2.0 2.5 3.0 3 COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J 160 250µs PULSE ...

Page 4

V = 15V 600V 25°C T =125° 5Ω 100 µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, ...

Page 5

... Figure 18,Minimim Reverse Bias Safe Operating Area SINGLE PULSE RECTANGULAR PULSE DURATION (SECONDS 0.0004 10 0.0269 5 ° 125 C J ° 0.608 800V 5Ω COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT45GP120JDQ2 , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak θ 1 min (f max f = max1 t d(on max2 diss ...

Page 6

APT30DQ120 D.U.T. Figure 21, Inductive Switching Test Circuit 90 d(off) f Collector Voltage 90% 10% Switching Collector Current Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms ...

Page 7

... RECTANGULAR PULSE DURATION (seconds) RC MODEL Junction temp (°C) 0.219 Power 0.468 (watts) 0.341 Case temperature (°C) FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL APT45GP120JDQ2 = 25°C unless otherwise specified. C APT45GP120JDQ2 26 37 210 MIN TYP MAX 2.9 3.56 2.28 MIN TYP MAX = 25°C ...

Page 8

T = 175° 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 26. Forward Current vs. Forward ...

Page 9

... Emitter/Anode 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Emitter/Anode Dimensions in Millimeters and (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 APT45GP120JDQ2 D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 4 5 0.25 I RRM ...

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