APT100GT120JU2 Microsemi Power Products Group, APT100GT120JU2 Datasheet

IGBT 1200V 140A 480W SOT227

APT100GT120JU2

Manufacturer Part Number
APT100GT120JU2
Description
IGBT 1200V 140A 480W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT100GT120JU2

Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 100A
Current - Collector (ic) (max)
140A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
7.2nF @ 25V
Power - Max
480W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT100GT120JU2MI
APT100GT120JU2MI
Absolute maximum ratings
Symbol
IF
V
IF
V
I
I
I
P
CM
Trench + Field Stop IGBT
RMS
CES
C1
C2
GE
A V
D
ISOTOP
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Maximum Average Forward Current
RMS Forward Current (Square wave, 50% duty)
G
G
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
ISOTOP
E
®
Boost chopper
C
K
E
Parameter
K
C
®
www microsemi.com
Duty cycle=0.5
Application
Features
Benefits
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Trench + Field Stop IGBT
ISOTOP
Very low stray inductance
High level of integration
Low conduction losses
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
-
-
-
-
-
-
-
-
T
T
T
T
T
C
C
C
C
APT100GT120JU2
C
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
= 25°C
= 80°C
= 25°C
= 25°C
= 80°C
®
Package (SOT-227)
V
I
C
CES
= 100A @ Tc = 80°C
= 1200V
Max ratings
1200
140
100
280
±20
480
27
34
®
Technology
C
of V
Unit
CEsat
W
A
A
V
V
1 – 7

Related parts for APT100GT120JU2

APT100GT120JU2 Summary of contents

Page 1

... P Maximum Power Dissipation D IF Maximum Average Forward Current RMS Forward Current (Square wave, 50% duty) RMS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT100GT120JU2 V ® I Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction C • ...

Page 2

... Turn-off Delay Time d(off) T Fall Time f T Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off APT100GT120JU2 = 25°C unless otherwise specified j Test Conditions 1200V 25°C V =15V 100A T = 125° ...

Page 3

... ISOL T ,T Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight Typical IGBT Performance Curve APT100GT120JU2 Test Conditions I = 30A 60A 30A T = 125° ...

Page 4

... Effective Transient Thermal Impedance, Junction to Pulse Duration 0.3 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 rectangular Pulse Duration (Seconds) www microsemi.com APT100GT120JU2 Output Characteristics 200 T = 125° =17V 150 GE 100 (A) CE ...

Page 5

... Typical Diode Performance Curve APT100GT120JU2 www microsemi.com 5 – 7 ...

Page 6

... APT100GT120JU2 www microsemi.com 6 – 7 ...

Page 7

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT100GT120JU2 W=4.1 (.161) W=4.3 (.169) H=4 ...

Related keywords