APTGT50X60T3G Microsemi Power Products Group, APTGT50X60T3G Datasheet - Page 5

• Manufacturer Part Number: APTGT50X60T3G
• Description: IGBT TRENCH 3PHASE BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50X60T3G

• Igbt Type: Trench and Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.15nF @ 25V
• Power - Max: 176W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
1.6
1.4
1.2
0.8
0.6
0.4
0.2
80
70
60
50
40
30
20
10
0.00001
0
1
0
0
Operating Frequency vs Collector Current
switching
0.5
0.3
0.1
0.9
0.7
0.05
Hard
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
20
0.0001
I
C
40
(A)
V
D=50%
R
T
T
J
c
60
CE
G
=150°C
=85°C
=8.2Ω
=300V
Rectangular Pulse Duration in Seconds
0.001
www.microsemi.com
Single Pulse
Diode
80
0.01
100
80
60
40
20
0
0
0.1
APTGT50X60T3G
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
1.6
=25°C
2
10
2.4
5 - 5