APTGV50H120T3G Microsemi Power Products Group, APTGV50H120T3G Datasheet
APTGV50H120T3G
Specifications of APTGV50H120T3G
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APTGV50H120T3G Summary of contents
Page 1
... Solderable terminals both for power and signal for easy PCB mounting 14 • Low profile 13 • Easy paralleling due to positive • RoHS Compliant www.microsemi.com APTGV50H120T3G ® IGBT Q1, Q3: = 1200V ; I = 50A @ Tc = 80° 1200V ; I = 50A @ Tc = 80° Switching frequency kHz - RBSOA & SCSOA rated ...
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... Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off R Junction to Case Thermal resistance thJC APTGV50H120T3G = 25°C unless otherwise specified j ® characteristics Parameter T = 25° 80° 25° 25° 125°C ...
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... 60A 60A 800V R di/dt =200A/µs Parameter Test Conditions 1200V CE V =15V 50A www.microsemi.com APTGV50H120T3G Min Typ Max 1200 T = 25°C 100 125°C 500 80° 125°C 1 25°C 265 125°C 350 25°C 560 125°C 2890 j ...
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... R T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTGV50H120T3G Min Typ Max 3450 330 220 330 35 200 35 65 320 360 125°C 6 125°C 3.05 j 0.4 Min Typ ...
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... Top Trench + Field Stop IGBT Output Characteristics (V 100 0 heatsink 17 12 ® typical performance curves =15V) GE 100 =25° =125° 2.5 3 3.5 (V) www.microsemi.com APTGV50H120T3G Min Typ Max 2500 -40 150* -40 125 -40 100 M4 2.5 4.7 160 Output Characteristics T = 125° =17V =13V GE V =15V =9V GE ...
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... Top Fast diode typical performance curves 160 140 120 100 Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 0.0001 APTGV50H120T3G Energy losses vs Collector Current 600V 15V 18Ω =125° 125° Eoff 4 2 ...
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... V , Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 - Junction Temperature (°C) J APTGV50H120T3G Output Characteristics (V =15V 250µs Pulse Test < 0.5% Duty cycle =125° Collector to Emitter Voltage ( 50A 16 C =25° 25° ...
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... 125° Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 Eoff, 25A Gate Resistance (Ohms) www.microsemi.com APTGV50H120T3G Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 5Ω G 200 125 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125°C ...
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... Forw ard Current vs Forw ard Voltage 25° =25° 0.0 1.0 2 Anode to Cathode Voltage (V) F Single Pulse 0.0001 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGV50H120T3G Operating Frequency vs Collector Current V = 600V 50 5Ω 125° ZVS T = 75° ZCS 40 20 Hard switching ...