APTGT100TL60T3G Microsemi Power Products Group, APTGT100TL60T3G Datasheet

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APTGT100TL60T3G

Manufacturer Part Number
APTGT100TL60T3G
Description
IGBT MODULE 3LEVEL INVERTER SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT100TL60T3G

Igbt Type
Trench and Field Stop
Configuration
Three Level Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 100A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
6.1nF @ 25V
Power - Max
340W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Q1 to Q4 Absolute maximum ratings
RBSOA
Symbol
All multiple inputs and outputs must be shorted together
V
V
I
P
I
CM
CES
C
GE
D
Trench + Field Stop IGBT
29
30
31
32
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
28 27 26
Three level inverter
See application note APT0502 on www.microsemi.com
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
2
Example: 10/11/12 ; 7/8 …
Power Module
3
25
4
23 22
7
8
Parameter
20
10
19
11 12
18
16
15
14
13
www.microsemi.com
Application
Features
Benefits
APTGT100TL60T3G
T
T
T
T
T
C
C
C
C
j
Solar converter
Uninterruptible Power Supplies
Trench + Field Stop IGBT Technology
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
V
I
-
-
-
-
-
-
-
C
CES
= 100A @ Tc = 80°C
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
= 600V
200A @ 550V
Max ratings
600
200
±20
340
150
100
Unit
W
V
A
V
1 - 7

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APTGT100TL60T3G Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT100TL60T3G V I Application • Solar converter • Uninterruptible Power Supplies Features • ...

Page 2

... T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn on Energy on E Turn off Energy off I Short Circuit data sc R Junction to Case Thermal Resistance thJC APTGT100TL60T3G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 100A T = 150° ...

Page 3

... Junction to Case Thermal Resistance thJC Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25°C 25 ∆ 298.15 K 25/85 25 ∆B ⎡ T exp ⎢ B ⎣ APTGT100TL60T3G Test Conditions T = 25° =600V 150° 80° 75A T = 25° 150° 25° 150° ...

Page 4

... STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Typical performance curve APTGT100TL60T3G To heatsink Operating Frequency vs Collector Current 80 V =300V CE 60 D=50% R =3.3Ω ...

Page 5

... Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT100TL60T3G Output Characteristics 200 V =19V T = 150° 175 150 V =13V GE 125 V =15V 100 GE ...

Page 6

... Switching Energy Losses vs Gate Resistance 2 1 Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 0.0001 APTGT100TL60T3G =25°C J 1 300V 75A 150° Single Pulse 0.001 ...

Page 7

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT100TL60T3G =25° ...

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