APTGT100TL60T3G Microsemi Power Products Group, APTGT100TL60T3G Datasheet

APTGT100TL60T3G
Manufacturer Part Number	APTGT100TL60T3G
Description	IGBT MODULE 3LEVEL INVERTER SP3
Manufacturer	Microsemi Power Products Group
APTGT100TL60T3G datasheets	1. APTGT100TL60T3G.pdf (7 pages)

Request lead time and price

Availability: By request

International delivery:

Warranty: 60 days

Shipping & payment terms

Specifications of APTGT100TL60T3G
Igbt Type	Trench and Field Stop	Configuration	Three Level Inverter
Voltage - Collector Emitter Breakdown (max)	600V	Vce(on) (max) @ Vge, Ic	1.9V @ 15V, 100A
Current - Collector (ic) (max)	150A	Current - Collector Cutoff (max)	250µA
Input Capacitance (cies) @ Vce	6.1nF @ 25V	Power - Max	340W
Input	Standard	Ntc Thermistor	Yes
Mounting Type	Chassis Mount	Package / Case	SP3
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

Page 1/7

Download datasheet (219Kb)Embed

Prev Next

Three level inverter

Trench + Field Stop IGBT

Power Module

28 27 26

23 22

All multiple inputs and outputs must be shorted together

Example: 10/11/12 ; 7/8 …

Q1 to Q4 Absolute maximum ratings

Symbol

Parameter

Collector - Emitter Breakdown Voltage

CES

Continuous Collector Current

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

RBSOA

Reverse Bias Safe Operating Area

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note APT0502 on www.microsemi.com

APTGT100TL60T3G

Application

•

Solar converter

•

Uninterruptible Power Supplies

Features

•

Trench + Field Stop IGBT Technology

•

Kelvin emitter for easy drive

•

Very low stray inductance

•

High level of integration

•

Internal thermistor for temperature monitoring

Benefits

•

Stable temperature behavior

•

Very rugged

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Easy paralleling due to positive TC of VCEsat

•

Low profile

•

RoHS Compliant

11 12

= 25°C

= 80°C

= 25°C

= 150°C

www.microsemi.com

= 600V

CES

= 100A @ Tc = 80°C

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

RBSOA and SCSOA rated

Max ratings

Unit

600

150

100

200

±20

340

200A @ 550V

1 - 7

Download datasheet (219Kb)

Related parts for APTGT100TL60T3G
Part Number	Description	Manufacturer	Datasheet
APTGT100TA60PG	IGBT MODULE TRPL PHASE LEG SP6P	Microsemi Power Products Group	APTGT100TA60PG.pdf (5 pages)
APTGT100TDU60PG	IGBT MODULE TRIPLE DUAL SRC SP6P	Microsemi Power Products Group	APTGT100TDU60PG.pdf (5 pages)
APTGT100DU60TG	IGBT MOD TRENCH DUAL SOURCE SP4	Microsemi Power Products Group	APTGT100DU60TG.pdf (5 pages)
APTGT100DH170G	IGBT MOD TRENCH ASYM BRIDGE SP6	Microsemi Power Products Group	APTGT100DH170G.pdf (5 pages)
APTGT100H170G	IGBT MOD TRENCH FULL BRIDGE SP6	Microsemi Power Products Group	APTGT100H170G.pdf (5 pages)
APTGT100A120D1G	IGBT MODULE TRENCH PHASE LEG D1	Microsemi Power Products Group	APTGT100A120D1G.pdf (3 pages)
APTGT100DU170TG	IGBT DUAL SOURCE 1700V 150A SP4	Microsemi Power Products Group	APTGT100DU170TG.pdf (5 pages)
APTGT100SK60T1G	IGBT 600V 150A 340W SP4	Microsemi Power Products Group	APTGT100SK60T1G.pdf (5 pages)
APTGT100DA60T1G	IGBT BOOST CHOP 600V 150A SP1	Microsemi Power Products Group	APTGT100DA60T1G.pdf (5 pages)
APTGT100A60T1G	IGBT PHASE LEG 600V 150A SP1	Microsemi Power Products Group	APTGT100A60T1G.pdf (5 pages)
APTGT100DA120T1G	IGBT 1200V 140A 480W SP1	Microsemi Power Products Group	APTGT100DA120T1G.pdf (5 pages)
APTGT100DDA60T3G	IGBT MOD TRENCH BOOST CHOP SP3	Microsemi Power Products Group	APTGT100DDA60T3G.pdf (5 pages)
APTGT100DSK60T3G	IGBT MODULE DUAL BUCK CHOP SP3	Microsemi Power Products Group	APTGT100DSK60T3G.pdf (5 pages)
APTGT100DA120D1G	IGBT 1200V 150A 520W D1	Microsemi Power Products Group	APTGT100DA120D1G.pdf (3 pages)
APTGT100SK120D1G	IGBT 1200V 150A 520W D1	Microsemi Power Products Group	APTGT100SK120D1G.pdf (4 pages)

APTGT100TL60T3G Summary of contents
Page 1 ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT100TL60T3G V I Application • Solar converter • Uninterruptible Power Supplies Features • ... Page 2 ... T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn on Energy on E Turn off Energy off I Short Circuit data sc R Junction to Case Thermal Resistance thJC APTGT100TL60T3G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 100A T = 150° ... Page 3 ... Junction to Case Thermal Resistance thJC Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25°C 25 ∆ 298.15 K 25/85 25 ∆B ⎡ T exp ⎢ B ⎣ APTGT100TL60T3G Test Conditions T = 25° =600V 150° 80° 75A T = 25° 150° 25° 150° ... Page 4 ... STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Typical performance curve APTGT100TL60T3G To heatsink Operating Frequency vs Collector Current 80 V =300V CE 60 D=50% R =3.3Ω ... Page 5 ... Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT100TL60T3G Output Characteristics 200 V =19V T = 150° 175 150 V =13V GE 125 V =15V 100 GE ... Page 6 ... Switching Energy Losses vs Gate Resistance 2 1 Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 0.0001 APTGT100TL60T3G =25°C J 1 300V 75A 150° Single Pulse 0.001 ... Page 7 ... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT100TL60T3G =25° ...

APTGT100TL60T3G Summary of contents

Page 1
... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT100TL60T3G V I Application • Solar converter • Uninterruptible Power Supplies Features • ...
Page 2
... T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn on Energy on E Turn off Energy off I Short Circuit data sc R Junction to Case Thermal Resistance thJC APTGT100TL60T3G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 100A T = 150° ...
Page 3
... Junction to Case Thermal Resistance thJC Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25°C 25 ∆ 298.15 K 25/85 25 ∆B ⎡ T exp ⎢ B ⎣ APTGT100TL60T3G Test Conditions T = 25° =600V 150° 80° 75A T = 25° 150° 25° 150° ...
Page 4
... STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Typical performance curve APTGT100TL60T3G To heatsink Operating Frequency vs Collector Current 80 V =300V CE 60 D=50% R =3.3Ω ...
Page 5
... Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT100TL60T3G Output Characteristics 200 V =19V T = 150° 175 150 V =13V GE 125 V =15V 100 GE ...
Page 6
... Switching Energy Losses vs Gate Resistance 2 1 Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 0.0001 APTGT100TL60T3G =25°C J 1 300V 75A 150° Single Pulse 0.001 ...
Page 7
... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT100TL60T3G =25° ...