APTCV90TL12T3G Microsemi Power Products Group, APTCV90TL12T3G Datasheet
APTCV90TL12T3G
Specifications of APTCV90TL12T3G
APTCV90TL12T3GMI
Related parts for APTCV90TL12T3G
APTCV90TL12T3G Summary of contents
Page 1
... All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … All ratings @ T These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTCV90TL12T3G Trench & Field Stop IGBT4 Q2, Q3 1200V ; I CES CoolMOS™ Q1, Q4 900V ...
Page 2
... Q2 & Q3 Absolute maximum ratings Symbol Parameter V Collector - Emitter Breakdown Voltage CES I Continuous Collector Current C I Pulsed Collector Current CM V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area APTCV90TL12T3G T = 25° 80° 25°C c Test Conditions T = 25° 0V,V = 900V ...
Page 3
... Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off I Short Circuit data sc R Junction to Case Thermal Resistance thJC APTCV90TL12T3G Test Conditions Min 1200V 25° 15V 50A T = 150° ...
Page 4
... Junction to Case Thermal Resistance thJC Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25°C 25 ∆ 298.15 K 25/85 25 ∆B ⎡ exp ⎢ B ⎣ APTCV90TL12T3G Test Conditions T = 25° =1000V 125° 80° 40A 80A 40A T = 125° 25°C j ...
Page 5
... Operating Case Temperature C Torque Mounting torque Wt Package Weight * Tjmax = 150°C for Q1 & Q4 (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Q2 & Q3 Typical performance curve APTCV90TL12T3G To heatsink Operating Frequency vs Collector Current 60 V =600V CE D=50 =8.2 Ω ...
Page 6
... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 rectangular Pulse Duration (Seconds) www.microsemi.com APTCV90TL12T3G Output Characteristics 100 T = 150° =19V =15V ...
Page 7
... V , Drain to Source Voltage (V) DS Capacitance vs Drain to Source Voltage 100000 10000 1000 100 100 125 150 175 200 V , Drain to Source Voltage (V) DS APTCV90TL12T3G Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Breakdown Voltage vs Temperature 1000 6V 975 950 5V 925 900 Drain Current vs Case Temperature ...
Page 8
... I (A) C Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.2 0.05 0 0.00001 0.0001 APTCV90TL12T3G 3.0 4.0 Switching Energy Losses vs Gate Resistance 1.4 1 667V 15V 5Ω 0 125° 0.6 60 ...
Page 9
... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTCV90TL12T3G T =25° ...