APTGT100DU170TG Microsemi Power Products Group, APTGT100DU170TG Datasheet - Page 4

• Manufacturer Part Number: APTGT100DU170TG
• Description: IGBT DUAL SOURCE 1700V 150A SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT100DU170TG

• Igbt Type: Trench and Field Stop
• Configuration: Dual, Common Source
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 100A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 9nF @ 25V
• Power - Max: 560W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
200
175
150
125
100
200
175
150
125
100
75
50
25
0.25
0.15
0.05
87.5
62.5
37.5
12.5
Switching Energy Losses vs Gate Resistance
0
75
50
25
100
0.2
0.1
0
75
50
25
0.00001
0
0
0
5
0
0.5
Output Characteristics (V
T
V
V
I
T
C
J
J
CE
GE
6
=125°C
= 100A
= 125°C
0.05
0.5
0.3
5
0.7
0.9
0.1
Transfert Characteristics
= 900V
=15V
Gate Resistance (ohms)
1
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
10
1.5
8
15
0.0001
V
T
V
CE
J
=25°C
GE
2
9
20
(V)
(V)
T
J
2.5
=25°C
10
25
T
GE
J
3
11
30
=125°C
T
=15V)
J
=125°C
rectangular Pulse Duration (Seconds)
0.001
3.5
12
35
Eon
Eoff
Er
www.microsemi.com
Single Pulse
40
4
13
IGBT
0.01
250
200
150
100
APTGT100DU170TG
200
160
120
100
50
80
40
80
60
40
20
0
0
0
0
0
0
V
T
R
Reverse Bias Safe Operating Area
Energy losses vs Collector Current
T
V
V
R
T
GE
J
G
J
J
CE
GE
G
=125°C
0.1
=4.7Ω
25
= 125°C
=15V
= 125°C
= 4.7Ω
= 900V
= 15V
400
1
50
Output Characteristics
800
75 100 125 150 175 200
V
2
GE
I
V
C
=20V
V
CE
(A)
CE
1200
(V)
1
(V)
V
3
GE
=15V
1600
V
GE
V
4
=13V
GE
Eon
=9V
Eoff
Er
2000
10
5
4 - 5