APTGT150TL60G Microsemi Power Products Group, APTGT150TL60G Datasheet - Page 6

• Manufacturer Part Number: APTGT150TL60G
• Description: IGBT 3-LEVEL INVERTER 600V SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT150TL60G

• Igbt Type: Trench and Field Stop
• Configuration: Three Level Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 150A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 9.2nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

CR1 to CR4 Typical performance curve
200
175
150
125
100
2.5
1.5
0.5
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
0.00001
75
50
25
3
2
1
0
0
0
0
0
0.5
0.3
0.9
0.1
0.7
0.05
Forward Characteristic of diode
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
T
0.4
J
5
=150°C
Gate Resistance (ohms)
0.8
10
0.0001
V
1.2
15
F
(V)
T
J
1.6
=25°C
20
V
I
T
C
CE
J
= 100A
= 150°C
0.001
Rectangular Pulse Duration in Seconds
= 300V
25
2
Single Pulse
www.microsemi.com
2.4
30
0.01
4
3
2
1
0
0
Energy losses vs Collector Current
V
R
T
0.1
APTGT150TL60G
25
J
CE
G
= 150°C
= 3.3Ω
= 300V
50
75 100 125 150 175 200
I
F
(A)
1
10
6 - 7