APTGF300U120DG Microsemi Power Products Group, APTGF300U120DG Datasheet
APTGF300U120DG
Specifications of APTGF300U120DG
APTGF300U120DGMI
Related parts for APTGF300U120DG
APTGF300U120DG Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF300U120DG V CES I C Application • Zero Current Switching resonant mode C Features • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr Er Reverse Recovery Energy APTGF300U120DG = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V ...
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... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF300U120DG IGBT Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.07 °C/W ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 0.07 0.9 0.06 0.7 0.05 0.5 0.04 0.03 0.3 0.02 0.1 0.01 0.05 0 0.00001 0.0001 APTGF300U120DG =15V) GE 600 T J 500 400 300 200 T =125°C J 100 Energy losses vs Collector Current ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF300U120DG Forward Characteristic of diode 600 ...