APTGT200TL60G Microsemi Power Products Group, APTGT200TL60G Datasheet

POWER MODULE IGBT 600V 200A SP6

APTGT200TL60G

Manufacturer Part Number
APTGT200TL60G
Description
POWER MODULE IGBT 600V 200A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT200TL60G

Igbt Type
Trench and Field Stop
Configuration
Three Level Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 200A
Current - Collector (ic) (max)
300A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
12.2nF @ 25V
Power - Max
652W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTGT200TL60GMI
APTGT200TL60GMI
Q1 to Q4 Absolute maximum ratings
RBSOA
Symbol
V
V
I
P
I
CM
CES
C
GE
D
G1
E1
E2
G2
Trench + Field Stop IGBT
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Three level inverter
NEUTRAL
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
CR5
CR6
Power Module
VBUS
G1
E1
G2
E2
G3
E3
G4
E4
Q1
Q2
Q3
Q4
0/VBUS
Parameter
NEUTRAL
OUT
0/VBUS
VBUS
OUT
CR1
CR3
CR4
CR2
www.microsemi.com
G4
E4
E3
G3
Application
Features
Benefits
T
T
T
T
T
C
C
C
C
j
Solar converter
Uninterruptible Power Supplies
Trench + Field Stop IGBT Technology
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
V
I
-
-
-
-
-
-
-
-
-
C
APTGT200TL60G
CES
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
= 200A @ Tc = 80°C
Symmetrical design
M5 power connectors
= 600V
400A @ 550V
Max ratings
600
300
200
400
±20
652
Unit
W
V
A
V
1 - 7

Related parts for APTGT200TL60G

APTGT200TL60G Summary of contents

Page 1

... Low profile E4 • RoHS Compliant 25° 80° 25° 25° 150°C j www.microsemi.com APTGT200TL60G V = 600V CES I = 200A @ Tc = 80° Low voltage drop - Low tail current - Switching frequency kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design ...

Page 2

... T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn on Energy on E Turn off Energy off I Short Circuit data sc R Junction to Case Thermal Resistance thJC APTGT200TL60G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 200A T = 150° ...

Page 3

... Symbol Characteristic V RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight APTGT200TL60G Test Conditions Min 600 T = 25° =600V 150° 80° 150A T = 25° ...

Page 4

... SP6 Package outline See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com Typical performance curve APTGT200TL60G Operating Frequency vs Collector Current 80 V =300V CE D=50 .8Ω 50° =85° Hard switching 100 150 200 250 I (A) C www.microsemi.com 300 ...

Page 5

... Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT200TL60G Output Characteristics 400 V =19V T = 150° 350 300 V =13V GE 250 V =15V 200 GE ...

Page 6

... Energy losses vs Collector Current 5 = 300V 150A = 150° 12 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT200TL60G V = 300V 2.4Ω 150°C J 100 150 200 250 300 I ( ...

Page 7

... U.S and Foreign patents pending. All Rights Reserved. =25°C J 1 300V 200A 150° 12.5 15 Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT200TL60G Energy losses vs Collector Current = 300V CE = 1.8 Ω 150°C J 100 200 300 400 I ( ...

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