CPV363M4K Vishay, CPV363M4K Datasheet - Page 3

• Manufacturer Part Number: CPV363M4K
• Description: IGBT SIP MODULE 600V 6A IMS-2
• Manufacturer: Vishay

Specifications of CPV363M4K

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 11A
• Current - Collector (ic) (max): 11A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.74nF @ 30V
• Power - Max: 36W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Not Compliant
• Other names: *CPV363M4K; VS-CPV363M4K; VS-CPV363M4K; VSCPV363M4K; VSCPV363M4K

100
0.1
Fig. 2 - Typical Output Characteristics
12
10
10
8
6
4
2
0
1
0.1
1
V
CE
, Collector-to-Emitter Voltage (V)
T = 25 C
J
o
Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
GE
T = 150 C
J
= 15V
(Load Current = I
1
o
f, Frequency (KHz)
10
RMS
of fundamental)
100
0.1
10
Fig. 3 - Typical Transfer Characteristics
1
5
T = 150 C
J
10
V
GE
o
, Gate-to-Emitter Voltage (V)
T c = 9 0° C
T j = 1 25 ° C
P ow er F ac tor = 0 .8
M o d ula tio n D ep th = 1 .15
V c c = 50 % o f R a ted V o lta g e
T = 25 C
J
CPV363M4K
o
10
V
5µs PULSE WIDTH
CC
= 50V
100
0.00
2.92
0.58
3.50
1.17
2.33
1.75
15