CPV363M4K Vishay, CPV363M4K Datasheet - Page 7

• Manufacturer Part Number: CPV363M4K
• Description: IGBT SIP MODULE 600V 6A IMS-2
• Manufacturer: Vishay

Specifications of CPV363M4K

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 11A
• Current - Collector (ic) (max): 11A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.74nF @ 30V
• Power - Max: 36W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Not Compliant
• Other names: *CPV363M4K; VS-CPV363M4K; VS-CPV363M4K; VSCPV363M4K; VSCPV363M4K

Fig. 14 - Typical Reverse Recovery vs. di
600
400
200
160
120
80
40
0
0
Fig. 16 - Typical Stored Charge vs. di
100
100
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 °C
R
J
J
I = 6.0A
F
di /d t - (A /µ s)
I = 24A
F
di /d t - (A /µs)
f
f
I = 12A
F
I = 12 A
V = 2 0 0 V
T = 1 2 5 ° C
T = 2 5 °C
F
R
J
J
I = 24 A
F
I = 6.0 A
F
1000
f
1000
/dt
f
/dt
10000
1000
Fig. 15 - Typical Recovery Current vs. di
100
100
10
10
1
100
100
Fig. 17 - Typical di
I = 6 .0A
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 °C
F
R
J
J
V = 2 0 0 V
T = 1 2 5 ° C
T = 2 5 ° C
R
J
J
I = 12 A
I = 24 A
F
F
CPV363M4K
di /dt - (A /µ s)
di /d t - (A /µs)
I = 6 .0 A
F
f
f
I = 24 A
F
(rec)M
I = 12 A
/dt vs. di
F
f
/dt
f
1000
1000
/dt