APT75GT120JRDQ3 Microsemi Power Products Group, APT75GT120JRDQ3 Datasheet

no-image

APT75GT120JRDQ3

Manufacturer Part Number
APT75GT120JRDQ3
Description
IGBT 1200V 97A 481W SOT227
Manufacturer
Microsemi Power Products Group
Series
Thunderbolt IGBT®r
Datasheet

Specifications of APT75GT120JRDQ3

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 75A
Current - Collector (ic) (max)
97A
Current - Collector Cutoff (max)
200µA
Input Capacitance (cies) @ Vce
2.57nF @ 25V
Power - Max
481W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT75GT120JRDQ3G
APT75GT120JRDQ3G

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT75GT120JRDQ3
Manufacturer:
TOSHIBA
Quantity:
6 000
Part Number:
APT75GT120JRDQ3
Quantity:
118
The Thunderblot IGBT
Through Technology, the Thunderblot IGBT
switching speed.
• Low Forward Voltage Drop
• Low Tail Current
• RBSOA and SCSOA Rated
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
SSOA
R
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
G(int)
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
®
is a new generation of high voltage power IGBTs. Using Non- Punch
Thunderbolt IGBT
1
(V
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
CE
CE
CE
@ T
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
®
GE
GE
C
C
C
offers superior ruggedness and ultrafast
GE
GE
= 150°C
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
C
GE
= 3mA, T
GE
GE
C
C
= 0V, I
= 75A, T
= 75A, T
= 0V, T
= 0V, T
®
j
C
= 25°C)
= 4mA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
1200
MIN
4.5
2.7
APT75GT120JRDQ3
225A @ 1200V
APT75GT120JRDQ3
-55 to 150
1200
TYP
±30
225
481
300
5.5
3.2
3.9
97
42
5
APT75GT120JRDQ3
ISOTOP
G
1200V
MAX
TBD
200
480
6.5
3.7
®
"UL Recognized"
file # E145592
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA

Related parts for APT75GT120JRDQ3

APT75GT120JRDQ3 Summary of contents

Page 1

... 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT75GT120JRDQ3 APT75GT120JRDQ3 ISOTOP ® 25°C unless otherwise specified. C APT75GT120JRDQ3 1200 ± 225 225A @ 1200V 481 -55 to 150 300 MIN TYP MAX 1200 4.5 5.5 6.5 2.7 3.2 3.7 3.9 ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Switching Safe Operating Area ...

Page 3

PULSE TEST<0.5 % DUTY 180 CYCLE 160 140 120 100 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 1.10 1.05 1.00 ...

Page 4

V = 15V 400V 25°C or 125° 1.0Ω 100µ 100 130 I , COLLECTOR TO EMITTER CURRENT ...

Page 5

... RECTANGULAR PULSE DURATION (SECONDS) 50 0.0254 10 0.496 5 ° 125 C J ° 11 400V 5Ω COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT75GT120JRDQ3 200 400 600 800 1000 1200 1400 , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak θ 1 min (f max f = max1 t d(on max2 ...

Page 6

APT60DQ120 D.U.T. Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t d(off) CollectorVoltage 90 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching ...

Page 7

... SINGLE PULSE RECTANGULAR PULSE DURATION (seconds) RC MODEL Junction temp. (°C) 0.148 Power 0.238 (watts) 0.174 Case temperature. (°C) FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL APT75GT120JRDQ3 = 25°C unless otherwise specified. C APT75GN120JRDQ3 60 73 540 MIN TYP MAX 2.8 3.48 2.17 MIN TYP ...

Page 8

T = 175°C J 120 100 T = 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 25. Forward Current vs. ...

Page 9

... Package Outline W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Emitter/Anode * Emitter/Anode Dimensions in Millimeters and (Inches) APT75GT120JRDQ3 D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 4 5 0.25 I RRM 3 2 11.8 (.463) 12.2 (.480) 8 ...

Related keywords