APT100GT60JRDQ4 Microsemi Power Products Group, APT100GT60JRDQ4 Datasheet

IGBT 600V 148A 500W SOT227

APT100GT60JRDQ4

Manufacturer Part Number
APT100GT60JRDQ4
Description
IGBT 600V 148A 500W SOT227
Manufacturer
Microsemi Power Products Group
Series
Thunderbolt IGBT®r
Datasheet

Specifications of APT100GT60JRDQ4

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 100A
Current - Collector (ic) (max)
148A
Current - Collector Cutoff (max)
50µA
Input Capacitance (cies) @ Vce
5.15nF @ 25V
Power - Max
500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT100GT60JRDQ4MI
APT100GT60JRDQ4MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT100GT60JRDQ4
Manufacturer:
Microsemi Power Products Group
Quantity:
135
The Thunderbolt IGBT
Non-Punch-Through Technology, the Thunderbolt IGBT
ness and ultrafast switching speed.
Features
• Low Forward Voltage Drop
• Low Tail Current
• Integrated Gate Resistor
• RoHS Compliant
Static Electrical Characteristics
Maximum Ratings
Symbol Parameter
Symbol Characteristic / Test Conditions
Low EMI, High Reliability
T
V
V
V
SSOA
J
V
(BR)CES
V
, T
GE(TH)
CE(ON)
I
I
I
P
I
I
CES
GES
CM
CES
C1
C2
GE
D
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage (V
Collector Emitter On Voltage (V
Collector Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
is a new generation of high voltage power IGBTs. Using
Thunderbolt IGBT
1
CE
CE
CE
• RBSOA and SCSOA Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current
Microsemi Website - http://www.microsemi.com
= V
= 600V, V
= 600V, V
GE
GE
GE
GE
= 15V, I
= 15V, I
C
C
, I
= 100°C
= 25°C
J
= ±30V)
= 150°C
C
= 1.5mA, T
®
GE
GE
GE
®
C
C
= 0V, T
= 0V, T
= 0V, I
offers superior rugged-
= 100A, T
= 100A, T
C
j
j
j
= 25°C)
= 25°C)
= 125°C)
= 4mA)
j
j
= 25°C)
= 125°C)
2
2
All Ratings: T
APT100GT60JRDQ4
C
= 25°C unless otherwise specifi ed.
600V, 100A, V
Min
600
1.7
3
-
-
-
-
300A @ 600V
-55 to 150
Ratings
ISOTOP
600
±30
148
300
500
80
Typ
2.1
2.5
4
-
-
-
-
CE(ON)
®
.
1500
Max
"UL Recognized"
300
2.5
= 2.1V Typical
50
file # E145592
5
-
-
Amps
Watts
Unit
Volts
°C
Unit
Volts
μA
nA

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APT100GT60JRDQ4 Summary of contents

Page 1

... 600V 0V 25° 600V 0V 125° ±30V) GE Microsemi Website - http://www.microsemi.com APT100GT60JRDQ4 600V, 100A 2.1V Typical CE(ON) "UL Recognized" file # E145592 ISOTOP ® = 25°C unless otherwise specifi ed. C Ratings Unit 600 Volts ±30 148 80 Amps 300 300A @ 600V 500 ...

Page 2

... R = 4.3Ω 100μ 600V CE Inductive Switching (25° 400V 15V 100A 4.3Ω +25° Inductive Switching (125° 400V 15V 100A 4.3Ω +125° APT100GT60JRDQ4 Min Typ Max - 5150 - - 475 - - 295 - - 8 460 - - 210 - = 15V, GE 300 - 320 - - 100 - - 3250 - - 3525 ...

Page 3

... J 250µs PULSE TEST 3.5 <0.5 % DUTY CYCLE 2.5 1.5 0 FIGURE 6, On State Voltage vs Junction Temperature 200 180 160 140 120 100 75 100 125 150 FIGURE 8, DC Collector Current vs Case Temperature APT100GT60JRDQ4 12, 13, &15V 10V COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 2, Output Characteristics (T = 125° ...

Page 4

... FIGURE 14, Turn Off Energy Loss vs Collector Current 16000 E 200A on2, 14000 12000 10000 8000 6000 100A 4000 E 100A off, E 50A 2000 off FIGURE 16, Switching Energy Losses vs Junction Temperature APT100GT60JRDQ4 450 400 350 300 V =15V,T =25° =15V,T =125° 250 200 150 100 = V 400V CE ...

Page 5

... RECTANGULAR PULSE DURATION (SECONDS) 100 50 T (° 0.0587 5 4. 125 J are the external thermal 400V 4.3Ω Figure 20, Operating Frequency vs Collector Current APT100GT60JRDQ4 0 0 100 200 300 400 500 600 700 V , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak θ 1.0 10 ° ...

Page 6

... Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t d(off) CollectorVoltage 90 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Defi nitions Figure 22, Turn-on Switching Waveforms and Defi nitions T = 125° APT100GT60JRDQ4 Gate Voltage 10 d(on 90% Collector Current 5% 5% 10% CollectorVoltage Switching Energy = 125°C J ...

Page 7

... RECTANGULAR PULSE DURATION (seconds) T (°C) T (° 0.0673 0.188 0.0743 0.0182 0.361 5.17 FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL APT100GT60JRDQ4 = 25°C unless otherwise specifi ed. C APT100GT60JRDQ4 100 146 1000 Min Type Max 1.6 2.2 2.05 1.28 Min Typ Max 160 - ...

Page 8

... Figure 5. Reverse Recovery Current vs. Current Rate of Change 180 Q rr 160 t rr 140 120 100 125 150 25 50 Figure 7. Maximum Average Forward Current vs. CaseTemperature 100 200 APT100GT60JRDQ4 T =125° =400V R 200A 100A 50A 0 200 400 600 800 1000 1200 -di /dt, CURRENT RATE OF CHANGE(A/µs) ...

Page 9

... SOT-227 (ISOTOP ) Package Outline W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Emitter/Anode * Emitter/Anode Dimensions in Millimeters and (Inches ) APT100GT60JRDQ4 D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 0.25 I RRM 3 2 11.8 (.463) 12.2 (.480) 8 ...

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