APTGT30DA170T1G Microsemi Power Products Group, APTGT30DA170T1G Datasheet
APTGT30DA170T1G
Specifications of APTGT30DA170T1G
Related parts for APTGT30DA170T1G
APTGT30DA170T1G Summary of contents
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... CM V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT30DA170T1G ® Application 11 • • • Features NTC • 12 • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT30DA170T1G = 25°C unless otherwise specified j Test Conditions 1700V 25° 15V 30A T = 125°C C ...
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... R Resistance @ 25° 298.15 K 25/ exp SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTGT30DA170T1G To heatsink (see application note APT0406 on www.microsemi.com for more information Thermistor temperature 25 Thermistor value ...
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... 125° Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.1 0.05 0 0.00001 0.0001 APTGT30DA170T1G =15V =25° =125° 2 =25° =125° (V) GE ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT30DA170T1G V =900V ...