APTGF50DDA60T3G Microsemi Power Products Group, APTGF50DDA60T3G Datasheet

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APTGF50DDA60T3G

Manufacturer Part Number
APTGF50DDA60T3G
Description
IGBT MODULE NPT BOOST CHOP SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF50DDA60T3G

Igbt Type
NPT
Configuration
Dual Boost Chopper
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 50A
Current - Collector (ic) (max)
65A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.2nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Dual Boost chopper
NPT IGBT Power Module
13
14
CR1
22
7
23
8
Q1
26
27
29
30
31
15
R1
28 27 26
25
23 22
20
29
30
31
32
2
3
4
7
8
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF50DDA60T3G
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
CR2
Features
Non Punch Through (NPT) Fast IGBT
Q2
4
3
32
Kelvin emitter for easy drive
16
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
19
18
Benefits
16
Outstanding performance at high frequency
15
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
14
for easy PCB mounting
13
Low profile
10
11 12
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
single boost of twice the current capability
RoHS compliant
Max ratings
600
T
= 25°C
65
C
T
= 80°C
50
C
T
= 25°C
230
C
±20
T
= 25°C
250
C
T
= 125°C
100A@500V
j
www.microsemi.com
V
= 600V
CES
I
= 50A @ Tc = 80°C
C
®
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
-
Symmetrical design
Unit
V
A
V
W
1 - 6

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APTGF50DDA60T3G Summary of contents

Page 1

... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF50DDA60T3G Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction ...

Page 2

... Chopper diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50DDA60T3G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...

Page 3

... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF50DDA60T3G R T: Thermistor temperature 25    Thermistor value at T     T − ...

Page 4

... Pulse Test < 0.5% Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0.80 0.70 -50 - Junction Temperature (°C) J APTGF50DDA60T3G =15V) Output Characteristics (V GE 150 =-55°C 250µs Pulse Test J T =25°C < 0.5% Duty cycle J 100 T =125° ...

Page 5

... CE 2 15V 125°C Eon, 50A J 2 1.5 Eoff, 50A 1 0.5 Eon, 50A Gate Resistance (Ohms) www.microsemi.com APTGF50DDA60T3G Turn-Off Delay Time vs Collector Current 200 175 150 125 100 V = 400V 2.7Ω Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 60 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50DDA60T3G Operating Frequency vs Collector Current 240 ...

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