APTGT50TL601G Microsemi Power Products Group, APTGT50TL601G Datasheet - Page 7

• Manufacturer Part Number: APTGT50TL601G
• Description: POWER MODULE IGBT 600V 50A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50TL601G

• Igbt Type: Trench and Field Stop
• Configuration: Three Level Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.15nF @ 25V
• Power - Max: 176W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGT50TL601GMI; APTGT50TL601GMI

Microsemi reserves the right to change, without notice, the specifications and information contained herein
CR5 & CR6 Typical performance curve
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
100
1.2
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.8
0.6
0.4
0.2
Switching Energy Losses vs Gate Resistance
0.00001
80
60
40
20
1
0
1
0
0
5
0
V
V
I
T
C
J
0.5
CE
GE
0.3
0.9
0.1
= 50A
0.7
= 150°C
0.05
Forward Characteristic of diode
= 300V
=15V
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
T
15
0.4
J
=150°C
Gate Resistance (ohms)
25
0.8
0.0001
V
1.2
35
F
(V)
T
J
=25°C
1.6
45
0.001
Rectangular Pulse Duration in Seconds
55
2
Single Pulse
www.microsemi.com
2.4
65
0.01
1.5
0.5
1
0
0
APTGT50TL601G
Energy losses vs Collector Current
0.1
20
40
I
F
(A)
1
60
V
V
R
T
CE
GE
J
G
= 150°C
= 8.2Ω
= 300V
= 15V
80
10
100
7 - 7