APTGV25H120T3G Microsemi Power Products Group, APTGV25H120T3G Datasheet
APTGV25H120T3G
Specifications of APTGV25H120T3G
Related parts for APTGV25H120T3G
APTGV25H120T3G Summary of contents
Page 1
... Solderable terminals both for power and signal for easy PCB mounting 14 • Low profile 13 • Easy paralleling due to positive • RoHS Compliant www.microsemi.com APTGV25H120T3G ® IGBT Q1, Q3: = 1200V ; I = 25A @ Tc = 80° 1200V ; I = 25A @ Tc = 80° Switching frequency kHz - RBSOA & SCSOA rated ...
Page 2
... Bus I = 25A 27Ω G Inductive Switching (125° ±15V 600V Bus I = 25A 27Ω ±15V 600V Bus I = 25A 27Ω G www.microsemi.com APTGV25H120T3G Max ratings 1200 T = 25° 80° 25° ± 25°C 156 125°C 50A @ 1150V j Min Typ Max 250 T = 25°C 1.7 2 125° ...
Page 3
... 30A 800V R di/dt =200A/µs Parameter Test Conditions 1200V CE V =15V 25A 1mA 20V www.microsemi.com APTGV25H120T3G Min Typ Max 1200 T = 25°C 100 125°C 500 80°C 30 2.6 3.1 3 125°C 1 25°C 300 125°C 380 25°C 360 125°C ...
Page 4
... R T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTGV25H120T3G Min Typ Max 1650 250 110 160 305 346 125°C 3 125°C 1.5 j 0.6 Min Typ Max ...
Page 5
... Top Trench + Field Stop IGBT Output Characteristics ( 0 heatsink 17 12 ® typical performance curves =15V =25° =125° 2.5 3 3.5 (V) CE www.microsemi.com APTGV25H120T3G Min Typ Max 2500 -40 150* -40 125 -40 100 M4 2.5 4.7 110 Output Characteristics T = 125° =17V GE V =13V GE V =15V (V) ...
Page 6
... Top Fast diode typical performance curves Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.2 0.05 0 0.00001 0.0001 APTGV25H120T3G Energy losses vs Collector Current 600V 15V 27Ω 125° ...
Page 7
... Pulse Test 7 < 0.5% Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 - Junction Temperature (°C) J APTGV25H120T3G Output Characteristics (V =15V 250µs Pulse Test < 0.5% Duty cycle =125° 0 Collector to Emitter Voltage ( 25A 25° ...
Page 8
... Switching Energy Losses vs Gate Resistance 600V 15V Eon, 25A 125° Eoff, 25A Gate Resistance (Ohms) www.microsemi.com APTGV25H120T3G Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 22Ω G 200 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125°C J ...
Page 9
... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGV25H120T3G Operating Frequency vs Collector Current 120 ...