APTGF25H120T3G

Manufacturer Part NumberAPTGF25H120T3G
DescriptionIGBT MODULE NPT FULL BRIDGE SP3
ManufacturerMicrosemi Power Products Group
APTGF25H120T3G datasheet
 


Specifications of APTGF25H120T3G

Igbt TypeNPTConfigurationFull Bridge Inverter
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.7V @ 15V, 25A
Current - Collector (ic) (max)40ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce1.65nF @ 25VPower - Max208W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP3
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Full - Bridge
NPT IGBT Power Module
13 14
Q1
CR1
CR3
18
19
22
7
23
8
Q2
CR2
CR4
26
27
29
30
31
15
R1
28 27 26
25
23 22
20
29
30
31
32
2
3
4
7
8
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF25H120T3G
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Q3
11
Motor control
10
Features
Non Punch Through (NPT) Fast IGBT
-
-
Q4
-
4
-
-
3
-
-
-
32
-
16
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
19
18
16
Benefits
15
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
14
Solderable terminals both for power and signal
13
for easy PCB mounting
10
11 12
Low profile
Easy paralleling due to positive T
Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
RoHS compliant
Max ratings
1200
T
= 25°C
40
C
T
= 80°C
25
C
T
= 25°C
100
C
±20
T
= 25°C
208
C
T
= 125°C
50A@1150V
j
www.microsemi.com
V
= 1200V
CES
I
= 25A @ Tc = 80°C
C
®
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
of V
C
CEsat
Unit
V
A
V
W
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APTGF25H120T3G Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF25H120T3G Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Q3 11 • ...

  • Page 2

    ... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current RM I Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGF25H120T3G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

  • Page 3

    ... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF25H120T3G R T: Thermistor temperature 25    Thermistor value at T     T − ...

  • Page 4

    ... J 250µs Pulse Test 7 < 0.5% Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 - Junction Temperature (°C) J APTGF25H120T3G =15V 250µs Pulse Test =25°C < 0.5% Duty cycle =125° 25A 25° ...

  • Page 5

    ... Switching Energy Losses vs Gate Resistance 600V 15V Eon, 25A 125° Eoff, 25A Gate Resistance (Ohms) www.microsemi.com APTGF25H120T3G Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 22Ω G 200 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125° ...

  • Page 6

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF25H120T3G Operating Frequency vs Collector Current 120 ...