APTCV60TLM99T3G Microsemi Power Products Group, APTCV60TLM99T3G Datasheet
APTCV60TLM99T3G
Specifications of APTCV60TLM99T3G
APTCV60TLM99T3GMI
Related parts for APTCV60TLM99T3G
APTCV60TLM99T3G Summary of contents
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... All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … All ratings @ T These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTCV60TLM99T3G Trench & Field Stop IGBT Q2, Q3 600V ; I CES CoolMOS™ Q1, Q4 600V ...
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... Q2 & Q3 Absolute maximum ratings Symbol V Collector - Emitter Breakdown Voltage CES I Continuous Collector Current C I Pulsed Collector Current CM V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area APTCV60TLM99T3G T = 25° 80° 25°C c Test Conditions T = 25° 600V T = 125° ...
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... Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off I Short Circuit data sc R Junction to Case Thermal Resistance thJC APTCV60TLM99T3G Test Conditions Min 600V 25°C V =15V 30A T = 150° 400µ ...
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... Junction to Case Thermal Resistance thJC Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25°C 25 ∆ 298.15 K 25/85 25 ∆B ⎡ exp ⎢ B ⎣ APTCV60TLM99T3G Test Conditions T = 25° =600V 125° 80° 30A 60A 30A T = 125° 25°C j ...
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... Operating Case Temperature C Torque Mounting torque Wt Package Weight * Tjmax = 150°C for Q1 & Q4 (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Q2 & Q3 Typical performance curve APTCV60TLM99T3G To heatsink Operating Frequency vs Collector Current 80 V =300V CE D=50 0Ω ...
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... Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.8 1.6 0.9 1.4 0.7 1.2 1 0.5 0.8 0.3 0.6 0.4 0.1 Single Pulse 0.2 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration in Seconds www.microsemi.com APTCV60TLM99T3G Output Characteristics 60 V =19V T = 150° =15V 0 ...
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... Drain to Source Voltage (V) DS Capacitance vs Drain to Source Voltage 100000 10000 1000 100 100 125 150 175 200 V , Drain to Source Voltage (V) DS APTCV60TLM99T3G Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Breakdown Voltage vs Temperature 675 6.5V 650 6V 625 4.5V 600 25 15 ...
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... C Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.2 0.05 0 0.00001 0.0001 APTCV60TLM99T3G T =25°C J 1.6 2.0 2.4 Switching Energy Losses vs Gate Resistance 1 0.75 0 400V 15V 2.5Ω 0.25 ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTCV60TLM99T3G T =25° ...