APTCV50H60T3G Microsemi Power Products Group, APTCV50H60T3G Datasheet
APTCV50H60T3G
Specifications of APTCV50H60T3G
Related parts for APTCV50H60T3G
APTCV50H60T3G Summary of contents
Page 1
... Low junction to case thermal resistance • Solderable terminals both for power and signal 14 for easy PCB mounting 13 • Low profile • Easy paralleling due to positive T • RoHS Compliant www.microsemi.com APTCV50H60T3G ® IGBT Q1, Q3: = 600V ; I = 50A @ Tc = 80° 600V ; I = 49A @ Tc = 25° Ultra low R DSon ...
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... Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off R Junction to Case Thermal resistance thJC APTCV50H60T3G = 25°C unless otherwise specified j ® characteristics Parameter T = 25° 80° 25° 25° 150°C ...
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... 30A 400V R di/dt =200A/µs Parameter Test Conditions V = 0V,V = 600V 0V,V = 600V 10V 24. 3mA ± www.microsemi.com APTCV50H60T3G Min Typ Max 600 T = 25° 125°C 500 80°C 30 1.8 2.3 2 125°C 1 25° 125°C 160 25° 125°C 480 j 1.2 ...
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... R : Thermistor value − B heatsink www.microsemi.com APTCV50H60T3G Min Typ Max 7.2 0.29 150 100 45 675 520 1100 635 0.5 Min Typ Max 50 3952 Min Typ Max 2500 -40 150* ...
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... T =25° 0.5 1 1.5 V (V) CE Transfert Characteristics 100 T =25° =125° =150° =25° (V) GE APTCV50H60T3G 17 12 ® typical performance curves =15V) GE 100 T = 150° =150° 0.5 2 2.5 3 Energy losses vs Collector Current 3 300V 15V 8.2Ω 150°C ...
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... Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.2 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration (Seconds) APTCV50H60T3G Reverse Bias Safe Operating Area 125 100 =15V =150° =8.2Ω ...
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... V V =10V @ 50A GS GS 1.2 1.15 1.1 1.05 1 0.95 0 100 120 140 I , Drain Current (A) D APTCV50H60T3G Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Transfert Characteristics 140 V > 120 6.5V 250µs pulse test @ < 0.5 duty cycle 6V 100 80 5. 4.5V ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Coss 10000 1000 100 Drain to Source Voltage (V) DS APTCV50H60T3G ON resistance vs Temperature 3.0 V =10V GS 2 50A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 limited by R ...
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... U.S and Foreign patents pending. All Rights Reserved td(off td(on off 1000 V =400V DS D=50% R =5Ω G 100 T =125° =75°C C www.microsemi.com APTCV50H60T3G Rise and Fall times vs Current V =400V DS R =5Ω =125° L=100µ Drain Current (A) D Switching Energy vs Gate Resistance 2.5 V =400V ...