APTGT150DA120TG Microsemi Power Products Group, APTGT150DA120TG Datasheet

no-image

APTGT150DA120TG

Manufacturer Part Number
APTGT150DA120TG
Description
IGBT 1200V 200A 690W SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT150DA120TG

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 150A
Current - Collector (ic) (max)
220A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
10.7nF @ 25V
Power - Max
690W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
NPT IGBT Power Module
V
I
P
I
CM
CES
C
GE
D
VBUS SENSE
G2
E2
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VBUS
VBUS
SENSE
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Boost chopper
0/VBU S
Q2
CR1
0/VBUS
Parameter
G2
G2
E2
E2
VBUS
OUT
NTC2
NTC1
NTC2
NTC1
OUT
OUT
www.microsemi.com
T
T
T
T
T
c
c
c
c
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
300A @ 1200V
APTGF150DA120TG
Max ratings
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Non Punch Through (NPT) Fast IGBT
Kelvin emitter for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive T
Low profile
RoHS compliant
1200
200
150
300
±20
961
V
I
C
-
-
-
-
-
-
-
-
-
-
CES
= 150A @ Tc = 80°C
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
= 1200V
Unit
W
A
V
V
C
of V
®
CEsat
1 - 5

Related parts for APTGT150DA120TG

APTGT150DA120TG Summary of contents

Page 1

Boost chopper NPT IGBT Power Module VBUS VBUS SENSE CR1 0/VBU VBUS 0/VBUS E2 VBUS SENSE G2 Absolute maximum ratings Symbol Parameter V Collector - Emitter Breakdown Voltage CES I Continuous Collector Current C ...

Page 2

All ratings @ T Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Collector Current CES V Collector Emitter saturation Voltage CE(sat) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES Dynamic Characteristics Symbol Characteristic C Input Capacitance ...

Page 3

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25° 298.15 K 25/  exp B   Thermal and package characteristics Symbol Characteristic ...

Page 4

Typical Performance Curve Output Characteristics (V 300 250 T =25°C J 200 150 100 Transfert Characteristics 300 250 200 T =125°C 150 J 100 ...

Page 5

Operating Frequency vs Collector Current 100 ZVS 50 ZCS 40 hard 30 switching (A) C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.9 0.3 ...

Related keywords