APTGT150DA120TG

Manufacturer Part NumberAPTGT150DA120TG
DescriptionIGBT 1200V 200A 690W SP4
ManufacturerMicrosemi Power Products Group
APTGT150DA120TG datasheets

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Warranty: 60 days

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Specifications of APTGT150DA120TG

Igbt TypeNPTConfigurationSingle
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic2.1V @ 15V, 150A
Current - Collector (ic) (max)220ACurrent - Collector Cutoff (max)350µA
Input Capacitance (cies) @ Vce10.7nF @ 25VPower - Max690W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP4
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Boost chopper
NPT IGBT Power Module
VBUS
VBUS SENSE
CR1
Q2
G2
E2
0/VBU S
G2
E2
VBUS
0/VBUS
E2
VBUS
SENSE
G2
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF150DA120TG
V
I
C
Application
•
AC and DC motor control
•
Switched Mode Power Supplies
NTC2
•
Power Factor Correction
Features
•
Non Punch Through (NPT) Fast IGBT
-
-
-
OUT
-
-
-
-
-
•
Kelvin emitter for easy drive
•
Very low stray inductance
-
NTC1
-
•
Internal thermistor for temperature monitoring
•
High level of integration
Benefits
•
Outstanding performance at high frequency
operation
•
Stable temperature behavior
OUT
•
Very rugged
•
Direct mounting to heatsink (isolated package)
OUT
•
Low junction to case thermal resistance
•
Solderable terminals both for power and signal for
easy PCB mounting
NTC2
•
Easy paralleling due to positive T
NTC1
•
Low profile
•
RoHS compliant
Max ratings
1200
T
= 25°C
200
c
T
= 80°C
150
c
T
= 25°C
300
c
±20
T
= 25°C
961
c
T
= 150°C
300A @ 1200V
j
www.microsemi.com
= 1200V
CES
= 150A @ Tc = 80°C
®
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
of V
C
CEsat
Unit
V
A
V
W
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APTGT150DA120TG Summary of contents

  • Page 1

    Boost chopper NPT IGBT Power Module VBUS VBUS SENSE CR1 0/VBU VBUS 0/VBUS E2 VBUS SENSE G2 Absolute maximum ratings Symbol Parameter V Collector - Emitter Breakdown Voltage CES I Continuous Collector Current C ...

  • Page 2

    All ratings @ T Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Collector Current CES V Collector Emitter saturation Voltage CE(sat) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES Dynamic Characteristics Symbol Characteristic C Input Capacitance ...

  • Page 3

    Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25° 298.15 K 25/  exp B   Thermal and package characteristics Symbol Characteristic ...

  • Page 4

    Typical Performance Curve Output Characteristics (V 300 250 T =25°C J 200 150 100 Transfert Characteristics 300 250 200 T =125°C 150 J 100 ...

  • Page 5

    Operating Frequency vs Collector Current 100 ZVS 50 ZCS 40 hard 30 switching (A) C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.9 0.3 ...

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