APTGT35X120T3G Microsemi Power Products Group, APTGT35X120T3G Datasheet

APTGT35X120T3G

Manufacturer Part Number

APTGT35X120T3G

Description

IGBT MOD TRENCH 3PH BRIDGE SP3

Manufacturer

Microsemi Power Products Group

Datasheet

1.APTGT35X120T3G.pdf (5 pages)

Specifications of APTGT35X120T3G

Igbt Type

Trench and Field Stop

Configuration

Three Phase Inverter

Voltage - Collector Emitter Breakdown (max)

1200V

Vce(on) (max) @ Vge, Ic

2.1V @ 15V, 35A

Current - Collector (ic) (max)

55A

Current - Collector Cutoff (max)

250µA

Input Capacitance (cies) @ Vce

2.5nF @ 25V

Power - Max

208W

Input

Standard

Ntc Thermistor

Yes

Mounting Type

Chassis Mount

Package / Case

SP3

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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It is recommended to connect a decoupling capacitor

between pins 31 & 2 to reduce switching overvoltages, if DC

Power is connected between pins 15, 16 & 12.

Pins 15 & 16 must be shorted together.

Absolute maximum ratings

RBSOA

Symbol

CES

Trench + Field Stop IGBT

Collector - Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

Reverse Bias Safe Operating Area

28 27 26

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

3 Phase bridge

Power Module

Parameter

23 22

11 12

www.microsemi.com

= 125°C

= 25°C

= 80°C

= 25°C

Application

Features

Benefits

•

70A@1150V

Max ratings

APTGT35X120T3G

Motor control

Trench + Field Stop IGBT

Kelvin emitter for easy drive

Very low stray inductance

High level of integration

Internal thermistor for temperature monitoring

Outstanding performance at high frequency

operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal

for easy PCB mounting

Low profile

RoHS compliant

1200

±20

208

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- RBSOA and SCSOA rated

CES

= 35A @ Tc = 80°C

= 1200V

Unit

Technology

1 - 5

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APTGT35X120T3G Summary of contents

Page 1

... T = 25° 80° 25° 25° 125°C j www.microsemi.com APTGT35X120T3G V = 1200V CES I = 35A @ Tc = 80°C C • Motor control ® • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • ...

Page 2

... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGT35X120T3G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25° 15V ...

Page 3

... R : Thermistor value     − B       heatsink 17 12 www.microsemi.com APTGT35X120T3G Min Typ Max 50 3952 Min Typ Max IGBT 0.6 Diode 1.2 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 110 Unit kΩ K Unit ° ...

Page 4

... GE T =25° =125° 2.5 3 3.5 ( =25° =125° (V) GE Eon Eoff 65 85 105 Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APTGT35X120T3G Output Characteristics 125° =17V V =13V =15V = (V) CE Energy losses vs Collector Current 600V CE 7 Eoff ...

Page 5

... U.S and Foreign patents pending. All Rights Reserved. V =600V CE D=50% R =27Ω =125° =75° (A) C Diode Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APTGT35X120T3G Forward Characteristic of diode =125° =25° (V) F 0.1 1 ...

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