APTGV25H120BG Microsemi Power Products Group, APTGV25H120BG Datasheet

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APTGV25H120BG

Manufacturer Part Number
APTGV25H120BG
Description
IGBT NPT BST CHOP FULL BRDG SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGV25H120BG

Igbt Type
NPT, Trench and Field Stop
Configuration
Boost Chopper, Full Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 25A
Current - Collector (ic) (max)
40A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.8nF @ 25V
Power - Max
156W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Full bridge top switches : Trench + Field Stop IGBT
Full bridge bottom switches :
Q5 boost chopper :
EK5
G5
All multiple inputs and outputs must be shorted together
NPT & Trench + Field Stop IGBT
CR5
Q5
OUT1A/OUT1B ; VBUS1/VBUS2 ; K/K ; …
Boost chopper + Full - Bridge
E5 E5
K
K
K
K
C5
C5
G5
EK5
CR5B
APT0502 on www.microsemi.com
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
C5
C5
Power module
G1
G2
E2
OUT 1B
OUT 1A
FAST NPT IGBT
G2
G1
E5
Q2
Q1
E5
FAST NPT IGBT
VBUS1
CR1
CR2
VBUS 2
OUT1A
OUT1B
E2 0/VBUS
VBUS 1
0/VBUS
OUT2A
OUT2B
VBUS2
CR3
CR4
OUT 2B
OUT 2A
G3
G4
E4
www.microsemi.com
Q3
Q4
G3
G4
E4
Application
Features
Benefits
Trench & Field Stop IGBT Q1, Q3:
V
Fast NPT IGBT Q2, Q4:
V
Fast NPT IGBT Q5:
V
• Solar converter
• Q2, Q4, Q5(FAST Non Punch Through (NPT) IGBT)
• Q1, Q3 (Trench & Field Stop IGBT)
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Optimized conduction & switching losses
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
• Low profile
• Easy paralleling due to positive T
• RoHS Compliant
CES
CES
CES
for easy PCB mounting
- Low tail current
- Low tail current
- Switching frequency up to 100 kHz
- RBSOA & SCSOA rated
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
= 1200V , I
= 1200V ; I
= 1200V ; I
APTGV25H120BG
C
C
C
= 25A @ Tc = 80°C
= 25A @ Tc = 80°C
= 50A @ Tc = 80°C
C
of V
CEsat
1 - 14

Related parts for APTGV25H120BG

APTGV25H120BG Summary of contents

Page 1

... Solderable terminals both for power and signal OUT 2B VBUS 1 OUT 2A for easy PCB mounting • Low profile • Easy paralleling due to positive T G4 • RoHS Compliant E4 www.microsemi.com APTGV25H120BG = 1200V , I = 25A @ Tc = 80° 1200V ; I = 25A @ Tc = 80° 1200V ; I = 50A @ Tc = 80° Switching frequency up to 100 kHz - RBSOA & ...

Page 2

... Bus I = 25A 27Ω G Inductive Switching (125° ±15V 600V Bus I = 25A 27Ω ±15V 600V Bus I = 25A 27Ω G www.microsemi.com APTGV25H120BG Max ratings 1200 T = 25° 80° 25° ± 25°C 156 125°C 50A @ 1150V j Min Typ Max 250 T = 25°C 1.7 2 125° ...

Page 3

... 25A 667V R di/dt =200A/µs Parameter Test Conditions 1200V CE V =15V 25A 1mA 20V www.microsemi.com APTGV25H120BG Min Typ Max 1200 T = 25°C 100 125°C 500 80°C 25 2.6 3.1 3 125°C 1 25°C 320 125°C 360 25°C 480 125°C ...

Page 4

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr R Junction to Case Thermal resistance thJC APTGV25H120BG Test Conditions 25V 1MHz V = 15V 300V Bus I =25A C Inductive Switching (25°C) V ...

Page 5

... I = 50A Ω Inductive Switching (125° ±15V 600V Bus I = 50A Ω ±15V 600V Bus I = 50A Ω www.microsemi.com APTGV25H120BG Max ratings 1200 T = 25° 80° 25°C 150 c ± 25°C 312 150°C 100A @ 1200V j Min Typ Max T = 25°C 250 125°C ...

Page 6

... STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight * Tj=175°C for Trench & Field Stop IGBT 5. SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGV25H120BG Test Conditions T = 25° =1200V 125° 80° ...

Page 7

... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.8 0.9 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.1 0.05 0 0.00001 0.0001 APTGV25H120BG =15V 125° =125° 2.5 3 3.5 Energy losses vs Collector Current ...

Page 8

... Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.6 1.4 0.9 1.2 0.7 1 0.5 0.8 0.6 0.3 0.4 0.1 0.2 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration (Seconds) APTGV25H120BG T =1 25° =25°C J 1.0 2.0 3.0 4.0 , Anode to Cathode Voltage (V) F Single Pulse 0.01 0.1 www.microsemi.com ...

Page 9

... Pulse Test 7 < 0.5% Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.10 1.05 1.00 0.95 0. Junction Temperature (°C) J APTGV25H120BG Output Characteristics (V =15V 250µs Pulse Test < 0.5% Duty cycle =125° 0 Collector to Emitter Voltage ( 25A 25°C J ...

Page 10

... Switching Energy Losses vs Gate Resistance 600V 15V Eon, 25A 125° Eoff, 25A Gate Resistance (Ohms) www.microsemi.com APTGV25H120BG Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 22Ω G 200 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125°C J ...

Page 11

... Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.6 1.4 0.9 1.2 0.7 1 0.5 0.8 0.6 0.3 0.4 0.1 0.2 0.05 0 0.00001 0.0001 APTGV25H120BG Operating Frequency vs Collector Current 120 100 Cies 80 Coes 60 40 Hard ZCS switching Cres Collector Current (A) ...

Page 12

... Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0. Junction Temperature (°C) J APTGV25H120BG Output Characteristics (V =15V 250µs Pulse Test < 0.5% Duty cycle =125° Collector to Emitter Voltage ( 50A =25° 25° ...

Page 13

... 125° Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 Eoff, 25A Gate Resistance (Ohms) www.microsemi.com APTGV25H120BG Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 5Ω G 200 125 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125°C ...

Page 14

... Anode to Cathode Voltage (V) F Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.05 0.0001 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGV25H120BG Operating Frequency vs Collector Current V = 600V 50 5Ω 125°C J ZVS T = 75°C ...

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