APTGF75DSK120TG

Manufacturer Part NumberAPTGF75DSK120TG
DescriptionIGBT MODULE NPT BUCK CHOP SP4
ManufacturerMicrosemi Power Products Group
APTGF75DSK120TG datasheet
 

Specifications of APTGF75DSK120TG

Igbt TypeNPTConfigurationDual, Common Source
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.7V @ 15V, 75A
Current - Collector (ic) (max)100ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce5.1nF @ 25VPower - Max500W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP4
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesAPTGF75DSK120TGMP
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Dual Buck Chopper
NPT IGBT Power Module
VBUS
Q1
G1
E1
OUT1
OUT2
0/VBUS SENSE
NTC1
0/VBUS
G2
0/VBUS
E2
SENSE
VBUS
0/VBUS
E1
0/VBUS
G1
SENSE
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF75DSK120TG
V
CES
I
C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Q2
Non Punch Through (NPT) Fast IGBT
G2
-
-
-
E2
-
-
-
-
-
Kelvin emitter for easy drive
0/VBUS SENSE
Very low stray inductance
-
NTC2
-
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
OUT2
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
OUT1
Solderable terminals both for power and signal for
easy PCB mounting
NTC2
Easy paralleling due to positive TC of VCEsat
NTC1
Low profile
RoHS compliant
Max ratings
1200
T
= 25°C
100
c
T
= 80°C
75
c
T
= 25°C
150
c
±20
T
= 25°C
500
c
T
= 150°C
150A @ 1200V
j
www.microsemi.com
= 1200V
= 75A @ Tc = 80°C
®
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
Unit
V
A
V
W
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APTGF75DSK120TG Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF75DSK120TG V CES I C Application • AC and DC motor control • Switched Mode Power Supplies ...

  • Page 2

    ... Diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF75DSK120TG = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

  • Page 3

    ... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGF75DSK120TG R T: Thermistor temperature 25    Thermistor value at T     ...

  • Page 4

    ... Eoff Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.1 0.05 0.05 0 0.00001 0.0001 APTGF75DSK120TG =15V) GE 150 T J 125 100 =125° Energy losses vs Collector Current 125° ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF75DSK120TG Forward Characteristic of diode 250 ...