APTGF75DH120TG

Manufacturer Part NumberAPTGF75DH120TG
DescriptionIGBT MODULE NPT ASYM BRIDGE SP4
ManufacturerMicrosemi Power Products Group
APTGF75DH120TG datasheet
 

Specifications of APTGF75DH120TG

Igbt TypeNPTConfigurationAsymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.7V @ 15V, 75A
Current - Collector (ic) (max)100ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce5.1nF @ 25VPower - Max500W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP4
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Asymmetrical - Bridge
NPT IGBT Power Module
VBUS
Q1
G1
E1
OUT1
O UT2
CR2
0/VBUS SENSE
NTC1
0/VBUS
G4
VBUS
SENSE
E4
VBUS
0/VBUS
E1
0/VBUS
SENSE
G1
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF75DH120TG
V
I
Application
Welding converters
Switched Mode Power Supplies
VBUS SENSE
Uninterruptible Power Supplies
Motor control
CR3
Features
Non Punch Through (NPT) Fast IGBT
-
-
-
Q4
-
G 4
-
-
-
E4
-
Kelvin emitter for easy drive
NT C2
Very low stray inductance
-
-
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
OUT2
Very rugged
Direct mounting to heatsink (isolated package)
OUT1
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
NTC2
Easy paralleling due to positive TC of VCEsat
NTC1
Low profile
RoHS compliant
Max ratings
1200
T
= 25°C
100
c
T
= 80°C
75
c
T
= 25°C
150
c
±20
T
= 25°C
500
c
T
= 150°C
150A @ 1200V
j
www.microsemi.com
= 1200V
CES
= 75A @ Tc = 80°C
C
®
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
Unit
V
A
V
W
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APTGF75DH120TG Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF75DH120TG V I Application • Welding converters • Switched Mode Power Supplies VBUS SENSE • ...

  • Page 2

    ... Diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF75DH120TG = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

  • Page 3

    ... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGF75DH120TG R T: Thermistor temperature 25    Thermistor value at T     ...

  • Page 4

    ... Eoff Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.1 0.05 0.05 0 0.00001 0.0001 APTGF75DH120TG =15V) GE 150 T J 125 100 =125° Energy losses vs Collector Current 125° ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF75DH120TG Forward Characteristic of diode 250 ...