APTCV40H60CT1G Microsemi Power Products Group, APTCV40H60CT1G Datasheet
APTCV40H60CT1G
Specifications of APTCV40H60CT1G
Related parts for APTCV40H60CT1G
APTCV40H60CT1G Summary of contents
Page 1
... Top switches : Trench + Field Stop IGBT Bottom switches : CoolMOS™ Pins 3/4 must be shorted together These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com All ratings @ T APTCV40H60CT1G Trench & Field Stop V = 600V ; I CES ® ...
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... T Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off R Junction to Case Thermal resistance thJC APTCV40H60CT1G ® characteristics Parameter T = 25° 80° 25° 25° 150°C J Test Conditions V = 0V, V ...
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... Single Pulse Avalanche Energy AS Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Drain Current DSS R Drain – Source on Resistance DS(on) V Gate Threshold Voltage GS(th) I Gate – Source Leakage Current GSS APTCV40H60CT1G Test Conditions Min 600 T = 25° =600V 125°C j 50% duty cycle Tc = 100° 25° ...
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... Diode Forward Voltage SD dv/dt Peak Diode Recovery t Reverse Recovery Time rr Q Reverse Recovery Charge rr dv/dt numbers reflect the limitations of the circuit rather than the device itself. ≤ - 36A di/dt ≤ 100A/µ APTCV40H60CT1G Test Conditions 25V 1MHz V = 10V 300V Bus I = 36A D Inductive Switching (125° ...
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... Operating Case Temperature C Torque Mounting torque Wt Package Weight Tj=175°C for Trench & Field Stop IGBT 5. SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTCV40H60CT1G R T: Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value at T ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 0.0001 APTCV40H60CT1G ® typical performance curves =15V) Output Characteristics 100 150° =150° 0.5 1 1.5 2.5 3 Energy losses vs Collector Current 3 ...
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... V Forward Voltage (V) F Capacitance vs.Reverse Voltage 400 350 300 250 200 150 100 100 V Reverse Voltage R www.microsemi.com APTCV40H60CT1G Single Pulse 0.01 0.1 Reverse Characteristics 200 T =175°C J 160 T =125°C 120 3.5 200 300 400 500 V Reverse Voltage (V) R 1000 ...
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... Drain Current DS 1.2 Normalized to 1.15 V =10V @ 18A GS V =10V 1 =20V GS 0.95 0 Drain Current (A) D APTCV40H60CT1G Single Pulse 0.01 0.1 rectangular Pulse Duration (Seconds) Transfert Characteristics 80 V > I (on) 250µs pulse test @ < 0.5 duty 60 cycle =125°C 5. Gate to Source Voltage (V) GS ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 Coss 1000 100 Crss Drain to Source Voltage (V) DS APTCV40H60CT1G ON resistance vs Temperature 3.0 V =10V GS 2 18A D 2.0 1.5 1.0 0.5 0.0 150 Junction Temperature (°C) J Maximum Safe Operating Area 1000 100 ...
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... Infineon Technologies AG. “COOLMOS” trademark of Infineon Technologies AG”. Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTCV40H60CT1G 80 V =400V ...