APTGF180A60TG Microsemi Power Products Group, APTGF180A60TG Datasheet - Page 6

• Manufacturer Part Number: APTGF180A60TG
• Description: IGBT MODULE NPT PHASE LEG SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF180A60TG

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 180A
• Current - Collector (ic) (max): 220A
• Current - Collector Cutoff (max): 300µA
• Input Capacitance (cies) @ Vce: 8.6nF @ 25V
• Power - Max: 833W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
100000
10000
1000
0.16
0.14
0.12
0.08
0.06
0.04
0.02
100
0.1
0.00001
Capacitance vs Collector to Emitter Voltage
0
0
V
0.05
0.9
CE
0.5
0.3
0.7
0.1
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
40
0.001
Rectangular Pulse Duration (Seconds)
www.microsemi.com
Coes
Cies
Cres
50
Single Pulse
0.01
180
150
120
450
400
350
300
250
200
150
100
90
60
30
50
0
0
40
Operating Frequency vs Collector Current
0
switching
V
Hard
Reverse Bias Safe Operating Area
0.1
CE
APTGF180A60TG
, Collector to Emitter Voltage (V)
80
200
I
ZVS
C
ZCS
, Collector Current (A)
120
400
1
160
V
D = 50%
R
T
Tc=75°C
C E
G
J
= 125°C
600
= 2.5Ω
= 400V
200
800
10
240
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