APTGF90TA60PG

Manufacturer Part NumberAPTGF90TA60PG
DescriptionIGBT MODULE NPT TRPL PHASE SP6P
ManufacturerMicrosemi Power Products Group
APTGF90TA60PG datasheet
 

Specifications of APTGF90TA60PG

Igbt TypeNPTConfigurationThree Phase
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.5V @ 15V, 90A
Current - Collector (ic) (max)110ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce4.3nF @ 25VPower - Max416W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Triple phase leg
NPT IGBT Power Module
VBUS1
VBUS2
G1
G3
E1
E3
U
V
G2
G4
E2
E4
0/VBUS1
0/VBUS2
VBUS 1
VBUS 2
G1
G3
E1
E3
0/VBUS 1
0/VBUS 2
E2
E4
G2
G4
U
V
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Application
Welding converters
VBUS3
Switched Mode Power Supplies
Uninterruptible Power Supplies
G5
Motor control
Features
Non Punch Through (NPT) fast IGBT
E5
W
-
-
-
G6
-
-
E6
-
0/VBUS3
-
-
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Outstanding performance
operation
VBUS 3
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
G5
Solderable terminals both for power and signal for
E5
0/VBUS 3
easy PCB mounting
E6
Very low (12mm) profile
G6
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a phase
W
leg of three times the current capability
Module can be configured as a three phase bridge
Module can be configured as a boost followed by a
full bridge
RoHS compliant
Max ratings
600
T
= 25°C
110
c
T
= 80°C
90
c
T
= 25°C
315
c
±20
T
= 25°C
416
c
T
= 150°C
200A @ 600V
j
www.microsemi.com
APTGF90TA60PG
V
= 600V
CES
I
= 90A @ Tc = 80°C
C
®
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
-
Symmetrical design
-
Lead frames for power connections
at
high frequency
Unit
V
A
V
W
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APTGF90TA60PG Summary of contents

  • Page 1

    ... T = 25°C 315 c ± 25°C 416 150°C 200A @ 600V j www.microsemi.com APTGF90TA60PG V = 600V CES I = 90A @ Tc = 80°C C ® Low voltage drop Low tail current Switching frequency up to 100 kHz Soft recovery parallel diodes Low diode VF Low leakage current Avalanche energy rated ...

  • Page 2

    ... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF90TA60PG = 25°C unless otherwise specified j Test Conditions 25° 600V T = 125° 25°C V =15V ...

  • Page 3

    ... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6-P Package outline (dimensions in mm) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTGF90TA60PG Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 www.microsemi.com Typ Max Unit 0 ...

  • Page 4

    ... On state Voltage vs Junction Temperature 4 3.5 Ic=180A 3 Ic=180A 2.5 2 1.5 Ic=45A Ic=90A 1 Ic=45A 0 -50 DC Collector Current vs Case Temperature 140 120 100 100 125 -50 www.microsemi.com APTGF90TA60PG =10V =-55° =25° =125° Collector to Emitter Voltage (V) CE Gate Charge V =120V = 90A CE = 25° =300V CE V =480V CE 50 100 ...

  • Page 5

    ... Eon, 180A CE Eoff, 180A V = 15V 125°C J Eoff, 90A 8 Eon, 90A Eoff, 45A 4 Eon, 45A Gate Resistance (Ohms) APTGF90TA60PG Turn-Off Delay Time vs Collector Current 250 200 150 100 V = 400V 5Ω 150 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V, V ...

  • Page 6

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF90TA60PG Reverse Bias Safe Operating Area 250 ...