APTGF90TDU60PG

Manufacturer Part NumberAPTGF90TDU60PG
DescriptionIGBT MODULE NPT TRPLE DUAL SP6P
ManufacturerMicrosemi Power Products Group
APTGF90TDU60PG datasheet
 

Specifications of APTGF90TDU60PG

Igbt TypeNPTConfigurationTriple, Dual - Common Source
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.5V @ 15V, 90A
Current - Collector (ic) (max)110ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce4.3nF @ 25VPower - Max416W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Triple dual Common Source
NPT IGBT Power Module
C1
C3
G1
G3
E1
E3
E1/E2
E3/E4
E2
E4
G2
G4
C2
C4
C 1
C 3
G1
G3
E1
E3
E1/E2
E3/E4
E2
E4
G2
G4
C 2
C 4
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF90TDU60PG
Application
AC Switches
C5
Switched Mode Power Supplies
Uninterruptible Power Supplies
G5
Features
E5
Non Punch Through (NPT) Fast IGBT
E5/E6
-
-
E6
-
-
G6
-
-
C6
-
-
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Outstanding performance
C 5
operation
Direct mounting to heatsink (isolated package)
G5
Low junction to case thermal resistance
E5
E5/E6
Solderable terminals both for power and signal for
E6
easy PCB mounting
G6
Very low (12mm) profile
Easy paralleling due to positive TC of VCEsat
C 6
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
RoHS compliant
Max ratings
600
T
= 25°C
110
c
T
= 80°C
90
c
T
= 25°C
315
c
±20
T
= 25°C
416
c
T
= 150°C
200A @ 600V
j
www.microsemi.com
V
= 600V
CES
I
= 90A @ Tc = 80°C
C
®
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
-
Symmetrical design
-
Lead frames for power connections
at
high frequency
Unit
V
A
V
W
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APTGF90TDU60PG Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF90TDU60PG Application • AC Switches C5 • Switched Mode Power Supplies • Uninterruptible Power Supplies ...

  • Page 2

    ... Diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF90TDU60PG = 25°C unless otherwise specified j Test Conditions 25° 600V T = 125° 25°C V =15V ...

  • Page 3

    ... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6-P Package outline (dimensions in mm) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTGF90TDU60PG Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 www.microsemi.com Typ Max Unit 0 ...

  • Page 4

    ... Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0.80 0.70 -50 - Junction Temperature (°C) J APTGF90TDU60PG =15V) Output Characteristics (V GE 300 T =-55°C 250µs Pulse Test J 250 < 0.5% Duty cycle T =25°C 200 J 150 100 T =125° =-55° ...

  • Page 5

    ... Eon, 180A CE Eoff, 180A V = 15V 125°C J Eoff, 90A 8 Eon, 90A Eoff, 45A 4 Eon, 45A Gate Resistance (Ohms) APTGF90TDU60PG Turn-Off Delay Time vs Collector Current 250 200 150 100 V = 400V 5Ω 150 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V, V ...

  • Page 6

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF90TDU60PG Reverse Bias Safe Operating Area 250 ...