APTGV100H60BTPG Microsemi Power Products Group, APTGV100H60BTPG Datasheet
APTGV100H60BTPG
Specifications of APTGV100H60BTPG
Related parts for APTGV100H60BTPG
APTGV100H60BTPG Summary of contents
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... Q5 boost chopper : CoolMOS™ K VBUS 0/VBUS OUT 1 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGV100H60BTPG Trench & Field Stop IGBT Q1, Q3 600V ; I CES Fast NPT IGBT Q2, Q4 600V ; I CES CoolMOS™ Q5 600V ; I CES VBUS2 Q3 ...
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... Fall Time f T Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn on Energy on E Turn off Energy off R Junction to Case Thermal resistance thJC APTGV100H60BTPG = 25°C unless otherwise specified j Parameter Test Conditions 600V =15V 100A 1 ...
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... Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Collector Current CES V Collector Emitter saturation Voltage CE(sat) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES APTGV100H60BTPG Test Conditions V =600V 100A 200A 100A 100A F V ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr R Junction to Case Thermal resistance thJC APTGV100H60BTPG Test Conditions 25V 1MHz V = 15V 300V Bus I = 90A C Inductive Switching (25°C) V ...
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... Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off E Turn-on Switching Energy on E Turn-off Switching Energy off R Junction to Case Thermal resistance thJC APTGV100H60BTPG Parameter Test Conditions V = 0V,V = 600V 0V,V = 600V 10V 47. 6mA GS ...
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... Q Reverse Recovery Charge rr R Junction to Case Thermal resistance thJC 4. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25° 298.15 K 25/ exp APTGV100H60BTPG Test Conditions V =600V 100A 200A 100A 100A 400V R di/dt =200A/µ Thermistor temperature ...
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... Top Trench + Field Stop IGBT typical performance curves Output Characteristics (V 200 T =25°C J 175 T =125°C 150 J 125 100 0 APTGV100H60BTPG To heatsink ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : =15V) GE 200 175 150 T =150°C 125 J 100 =25°C J 1.5 2 2.5 3 (V) CE www.microsemi.com ...
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... Top Fast diode typical performance curves 300 250 200 150 100 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.1 0.05 0 0.00001 0.0001 APTGV100H60BTPG Energy losses vs Collector Current 300V 15V 3.3Ω 150° ...
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... Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0. Junction Temperature (°C) J APTGV100H60BTPG =15V) Output Characteristics (V 300 250µs Pulse Test 250 < 0.5% Duty cycle T =25°C 200 J 150 100 T =125° Collector to Emitter Voltage ( 90A ...
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... Eon, 180A 15V Eoff, 180A 125°C J Eoff, 90A 8 Eon, 90A Eoff, 45A 4 Eon, 45A Gate Resistance (Ohms) APTGV100H60BTPG Turn-Off Delay Time vs Collector Current 250 200 150 100 V = 400V 5Ω 150 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V, V ...
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... Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.2 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration (Seconds) APTGV100H60BTPG Operating Frequency vs Collector Current 200 Cies ZVS 160 120 80 Coes 40 Cres Hard switching Collector Current (A) ...
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... GS GS 1.2 1.15 1.1 1.05 1 0.95 0 120 160 200 240 280 I , Drain Current (A) D APTGV100H60BTPG Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 280 V > 240 6.5V 250µs pulse test @ < 0.5 duty cycle 6V 200 160 5.5V 120 ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 1000000 100000 Coss 10000 1000 100 Drain to Source Voltage (V) DS APTGV100H60BTPG ON resistance vs Temperature 3.0 V =10V GS 2 95A D 2.0 1.5 1.0 0.5 0.0 150 Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...
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... DS 250 D=50% ZVS R =2.5Ω G 200 T =125° =75°C ZCS C 150 100 hard 50 switching Drain Current (A) D APTGV100H60BTPG Rise and Fall times vs Current 70 V =400V =2.5Ω =125° L=100µ Drain Current (A) D Switching Energy vs Gate Resistance 5 V =400V DS I =95A ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGV100H60BTPG Forw ard Current vs Forw ard Voltage 300 ...