APTGV50H120BTPG Microsemi Power Products Group, APTGV50H120BTPG Datasheet
APTGV50H120BTPG
Specifications of APTGV50H120BTPG
Related parts for APTGV50H120BTPG
APTGV50H120BTPG Summary of contents
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... FAST NPT IGBT K VBUS 0/VBUS OUT 1 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGV50H120BTPG Trench & Field Stop IGBT Q1, Q3 1200V ; I CES Fast NPT IGBT Q2, Q4 1200V ; I CES Fast NPT IGBT Q5 1200V ; I CES VBUS2 Q3 ...
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... Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off R Junction to Case Thermal resistance thJC APTGV50H120BTPG = 25°C unless otherwise specified j Parameter T = 25° 80° 25° 25° 125°C J Test Conditions T = 25° ...
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... Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Collector Current CES V Collector Emitter saturation Voltage CE(sat) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES APTGV50H120BTPG Test Conditions V =1200V 60A 120A 60A 60A F V ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr R Junction to Case Thermal resistance thJC APTGV50H120BTPG Test Conditions 25V 1MHz V = 15V 600V Bus I = 50A C Inductive Switching (25°C) V ...
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... Turn-off Delay Time d(off) T Fall Time f T Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off R Junction to Case Thermal resistance thJC APTGV50H120BTPG Parameter Test Conditions 1200V CE V =15V 100A ...
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... Q Reverse Recovery Charge rr R Junction to Case Thermal resistance thJC 4. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25° 298.15 K 25/ exp APTGV50H120BTPG Test Conditions V =1200V 60A 120A 60A 60A 800V R di/dt =200A/µ Thermistor temperature ...
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... See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com 7. Full bridge top switches curves 7.1 Top Trench + Field Stop IGBT typical performance curves Output Characteristics (V 100 0 APTGV50H120BTPG To heatsink ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : =15V) GE 100 =25° =125° 2.5 3 3.5 (V) www.microsemi.com ...
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... Top Fast diode typical performance curves 160 140 120 100 Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 0.0001 APTGV50H120BTPG Energy losses vs Collector Current 600V 15V 18Ω =125° 125° Eoff 4 2 ...
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... Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0. Junction Temperature (°C) J APTGV50H120BTPG Output Characteristics (V =15V 250µs Pulse Test < 0.5% Duty cycle =125° Collector to Emitter Voltage ( 50A 16 C =25° 25° ...
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... 125° Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 Eoff, 25A Gate Resistance (Ohms) APTGV50H120BTPG Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 5Ω G 200 125 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125°C ...
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... Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.2 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration (Seconds) APTGV50H120BTPG Operating Frequency vs Collector Current 120 Cies 100 80 ZVS 60 ZCS 40 Coes 20 Hard switching Cres ...
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... Eoff Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.1 0.04 0.05 0 0.00001 0.0001 APTGV50H120BTPG =15V) GE 200 T = 125°C J 175 150 125 100 Energy losses vs Collector Current 600V CE 30 ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGV50H120BTPG Forw ard Current vs Forw ard Voltage 160 ...