APTGF150DH120G Microsemi Power Products Group, APTGF150DH120G Datasheet

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APTGF150DH120G

Manufacturer Part Number
APTGF150DH120G
Description
IGBT MODULE NPT ASYM BRIDGE SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF150DH120G

Igbt Type
NPT
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 150A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
10.2nF @ 25V
Power - Max
961W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
NPT IGBT Power Module
V
I
P
I
CM
CES
C
GE
D
G1
E1
G1
E1
Asymmetrical - Bridge
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VBUS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
CR2
Q1
OUT1
Parameter
0/VBUS
OUT2
VBUS
0/VBUS
OUT2
OUT1
CR3
Q4
www.microsemi.com
G4
E4
E4
G4
T
T
T
T
T
c
c
c
c
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
300A @ 1200V
Max ratings
APTGF150DH120G
1200
200
150
300
±20
961
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Non Punch Through (NPT) Fast IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
Low profile
RoHS compliant
V
I
-
-
-
-
-
-
-
-
-
-
C
CES
= 150A @ Tc = 80°C
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
M5 power connectors
= 1200V
Unit
W
A
V
V
C
of V
CEsat
1 - 5

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APTGF150DH120G Summary of contents

Page 1

... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF150DH120G Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives ...

Page 2

... Diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF150DH120G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

Page 3

... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF150DH120G IGBT Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.13 °C/W ...

Page 4

... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 0.9 0.12 0.7 0.1 0.08 0.5 0.06 0.3 0.04 0.1 0.02 0.05 0 0.00001 0.0001 APTGF150DH120G =15V) GE 300 T J 250 200 150 100 T =125° (V) Energy losses vs Collector Current ...

Page 5

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF150DH120G Forward Characteristic of diode 500 ...

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