APTGF150DH120G

Manufacturer Part NumberAPTGF150DH120G
DescriptionIGBT MODULE NPT ASYM BRIDGE SP6
ManufacturerMicrosemi Power Products Group
APTGF150DH120G datasheet
 

Specifications of APTGF150DH120G

Igbt TypeNPTConfigurationAsymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.7V @ 15V, 150A
Current - Collector (ic) (max)200ACurrent - Collector Cutoff (max)350µA
Input Capacitance (cies) @ Vce10.2nF @ 25VPower - Max961W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Asymmetrical - Bridge
NPT IGBT Power Module
VBUS
Q1
G1
E1
OUT1
OUT2
CR2
0/VBUS
OUT1
G1
VBUS
0/VBUS
E1
OUT2
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF150DH120G
Application
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
CR3
Features
Non Punch Through (NPT) Fast IGBT
Q4
G4
E4
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
E4
Very rugged
G4
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
Low profile
RoHS compliant
Max ratings
1200
T
= 25°C
200
c
T
= 80°C
150
c
T
= 25°C
300
c
±20
T
= 25°C
961
c
T
= 150°C
300A @ 1200V
j
www.microsemi.com
V
= 1200V
CES
I
= 150A @ Tc = 80°C
C
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
-
Symmetrical design
-
M5 power connectors
of V
C
Unit
V
A
V
W
CEsat
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APTGF150DH120G Summary of contents

  • Page 1

    ... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF150DH120G Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives ...

  • Page 2

    ... Diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF150DH120G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

  • Page 3

    ... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF150DH120G IGBT Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.13 °C/W ...

  • Page 4

    ... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 0.9 0.12 0.7 0.1 0.08 0.5 0.06 0.3 0.04 0.1 0.02 0.05 0 0.00001 0.0001 APTGF150DH120G =15V) GE 300 T J 250 200 150 100 T =125° (V) Energy losses vs Collector Current ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF150DH120G Forward Characteristic of diode 500 ...