APTGF150DH120G Microsemi Power Products Group, APTGF150DH120G Datasheet
APTGF150DH120G
Specifications of APTGF150DH120G
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APTGF150DH120G Summary of contents
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... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF150DH120G Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives ...
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... Diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF150DH120G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...
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... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF150DH120G IGBT Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.13 °C/W ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 0.9 0.12 0.7 0.1 0.08 0.5 0.06 0.3 0.04 0.1 0.02 0.05 0 0.00001 0.0001 APTGF150DH120G =15V) GE 300 T J 250 200 150 100 T =125° (V) Energy losses vs Collector Current ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF150DH120G Forward Characteristic of diode 500 ...