APTGT400U120D4G Microsemi Power Products Group, APTGT400U120D4G Datasheet - Page 2

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APTGT400U120D4G

Manufacturer Part Number
APTGT400U120D4G
Description
IGBT 1200V 600A 2250W D4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT400U120D4G

Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 400A
Current - Collector (ic) (max)
600A
Current - Collector Cutoff (max)
8mA
Input Capacitance (cies) @ Vce
28nF @ 25V
Power - Max
2250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTGT400U120D4G
Manufacturer:
APT
Quantity:
1 000
Part Number:
APTGT400U120D4G
Quantity:
50
Electrical Characteristics
Dynamic Characteristics
Reverse diode ratings and characteristics
Thermal and package characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Torque
BV
V
V
V
T
T
T
T
R
T
I
I
C
C
C
E
CE(on)
Wt
GE(th)
V
Q
T
CES
GES
T
d(off)
T
T
d(off)
T
T
d(on)
d(on)
ISOL
STG
thJC
oes
res
rec
ies
CES
C
F
rr
J
r
f
r
f
Collector - Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Energy
Reverse Recovery Charge
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
All ratings @ T
APT website – http://www.advancedpower.com
j
= 25°C unless otherwise specified
V
Test Conditions
I
V
I
V
di/dt =900A/µs
I
V
di/dt =900A/µs
Test Conditions
V
V
I
V
V
Test Conditions
V
V
f = 1MHz
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
C
C
C
F
F
F
GE
G
G
GE
GE
GE
GE
GE
CE
GE
Bus
GE
Bus
GE
R
R
= 400A
= 400A
= 400A
= 400A
= 400A
= 400A
= 1.8Ω
= 1.8Ω
= 600V
= 600V
= 0V, V
= 25V
= 0V
= 0V, I
= 15V
= V
= 20V, V
= 0V
= 15V
= 15V
= 600V
= 600V
CE
, I
C
CE
= 12mA
C
CE
= 1200V
= 12mA
= 0V
T
T
T
T
T
T
T
j
j
j
j
j
j
j
Diode
APTGT400U120D4
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
IGBT
M6
M4
2500
Min
-40
-40
-40
Min
1200
Min
Min
1.4
5.0
3
1
Typ
Typ
Typ
Typ
280
550
130
300
100
650
180
1.6
1.6
1.7
2.0
5.8
1.6
1.2
34
40
72
28
90
0.055
0.125
Max
Max
150
125
125
420
Max
Max
600
2.1
2.1
6.5
5
2
8
Unit
°C/W
Unit
N.m
Unit
Unit
mA
mJ
µC
°C
nA
nF
V
ns
ns
V
V
V
V
g
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